Overview
The 2SC5658RM3T5G is an NPN silicon general-purpose amplifier transistor produced by onsemi. This transistor is designed for low power surface mount applications where board space is limited. It is housed in the SOT-723 package, making it ideal for compact electronic designs. The device is AEC-Q101 qualified and PPAP capable, ensuring its suitability for automotive and other applications requiring stringent quality standards.
Key Specifications
| Characteristic | Symbol | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 7.0 | - | - | Vdc |
| Collector Current - Continuous | IC | - | - | 150 | mAdc |
| Power Dissipation | PD | - | - | 260 | mW |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
| DC Current Gain (hFE) | hFE | 120 | 215 | 560 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | - | - | 0.4 | Vdc |
| Transition Frequency (fT) | fT | - | 180 | - | MHz |
Key Features
- High DC current gain (hFE) of 120 to 560, with a typical value of 215 at VCE = 6 V and IC = 1 mA.
- Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V.
- ESD performance: Human Body Model ≥ 2000 V, Machine Model ≥ 200 V.
- Compact SOT-723 package, ideal for low power surface mount applications.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other stringent applications.
- Pb-free and available in tape and reel packaging for high-volume production.
Applications
The 2SC5658RM3T5G transistor is versatile and can be used in a variety of general-purpose amplifier applications. It is particularly suited for:
- Automotive electronics due to its AEC-Q101 qualification.
- Consumer electronics where compact design and low power consumption are critical.
- Industrial control systems requiring reliable and efficient amplification.
- Audio and signal processing circuits where high gain and low saturation voltage are beneficial.
Q & A
- What is the maximum collector current of the 2SC5658RM3T5G transistor?
The maximum continuous collector current is 150 mA.
- What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) is 215 at VCE = 6 V and IC = 1 mA.
- What is the maximum collector-emitter voltage (VCEO) for this transistor?
The maximum collector-emitter voltage (VCEO) is 50 V.
- Is the 2SC5658RM3T5G transistor Pb-free?
- What is the junction temperature range for this transistor?
The junction temperature range is up to 150°C.
- What package type is the 2SC5658RM3T5G transistor available in?
The transistor is available in the SOT-723 package.
- Is the 2SC5658RM3T5G transistor suitable for automotive applications?
- What is the transition frequency (fT) of this transistor?
The transition frequency (fT) is 180 MHz.
- What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is less than 0.4 V.
- How is the 2SC5658RM3T5G transistor packaged for high-volume production?
