MMBT3904LT1G
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onsemi MMBT3904LT1G

Manufacturer No:
MMBT3904LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications. It is housed in the SOT-23 (TO-236-3) package, which is suitable for lower power surface mount applications. This transistor is part of the MMBT3904L family and is known for its high-current density and high voltage range capabilities. The MMBT3904LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it environmentally friendly and compliant with various regulatory standards.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current - Continuous IC 200 mAdc
Collector Current - Peak ICM - mAdc
Maximum Power Dissipation PD 300 mW
Transition Frequency fT 300 MHz
DC Current Gain hFE 100 - 400 -
Operating Temperature Range TJ -55 to +150 °C
Package Type - SOT-23 (TO-236-3) -

Key Features

  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental compliance and safety.
  • AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • High-current density and high voltage range capabilities, suitable for various linear and switching applications.
  • Maximum collector-emitter voltage of 40 V and maximum collector-base voltage of 60 V, providing robust performance.
  • Maximum power dissipation of 300 mW and transition frequency of 300 MHz, indicating good high-frequency performance).
  • Operating temperature range from -55°C to +150°C, making it versatile for different environmental conditions).

Applications

  • General Purpose Switching: Suitable for general-purpose switching applications due to its robust electrical characteristics.
  • Signal Processing: Can be used in signal processing circuits due to its high gain and low noise figure).
  • Industrial: Used in various industrial applications requiring reliable and efficient transistor performance).
  • Automotive: AEC-Q101 Qualified, making it suitable for automotive applications).

Q & A

  1. What is the MMBT3904LT1G transistor?

    The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor designed for use in linear and switching applications).

  2. What package type does the MMBT3904LT1G use?

    The MMBT3904LT1G is housed in the SOT-23 (TO-236-3) package).

  3. What are the maximum collector-emitter and collector-base voltages of the MMBT3904LT1G?

    The maximum collector-emitter voltage is 40 V and the maximum collector-base voltage is 60 V).

  4. What is the maximum collector current of the MMBT3904LT1G?

    The maximum collector current is 200 mA).

  5. Is the MMBT3904LT1G RoHS compliant?

    Yes, the MMBT3904LT1G is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant).

  6. What is the operating temperature range of the MMBT3904LT1G?

    The operating temperature range is from -55°C to +150°C).

  7. What are some typical applications of the MMBT3904LT1G?

    It is used in general-purpose switching, signal processing, industrial, and automotive applications).

  8. What is the transition frequency of the MMBT3904LT1G?

    The transition frequency is 300 MHz).

  9. Is the MMBT3904LT1G suitable for high-frequency applications?

    Yes, with a transition frequency of 300 MHz, it is suitable for high-frequency applications).

  10. What does the 'G' in MMBT3904LT1G stand for?

    The 'G' stands for 'green', indicating that the transistor is lead-free).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:300 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number MMBT3904LT1G MMBT3904WT1G MMBT3904LT3G MMBT3906LT1G MMBT3904TT1G MMBT3904LT1H MMBT3904LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi Infineon Technologies
Product Status Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN PNP NPN - NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA 200 mA - 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V 40 V - 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA - 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V - 100 @ 10mA, 1V
Power - Max 300 mW 150 mW 300 mW 300 mW 300 mW - 225 mW
Frequency - Transition 300MHz 300MHz 300MHz 250MHz 300MHz - 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-75, SOT-416 - SOT-23-3 (TO-236)

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