Overview
The SMMBT3904LT1G is a general-purpose NPN silicon transistor produced by onsemi. This device is part of the MMBT3904L series and is designed for a wide range of applications requiring reliable and efficient transistor performance. The SMMBT3904LT1G is packaged in a SOT-23 (TO-236) case, making it suitable for compact and high-density electronic designs. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 200 | mAdc |
| Collector Current - Peak | ICM | 900 | mAdc |
| Total Device Dissipation (FR-5 Board @ TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) | HFE | 40 - 70 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.2 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.65 - 0.85 | Vdc |
| Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) | fT | 300 | MHz |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- High collector-emitter breakdown voltage (VCEO = 40 Vdc) and collector-base breakdown voltage (VCBO = 60 Vdc).
- Low collector-emitter saturation voltage (VCE(sat) = 0.2 Vdc) and base-emitter saturation voltage (VBE(sat) = 0.65 - 0.85 Vdc).
- High current-gain - bandwidth product (fT = 300 MHz), suitable for high-frequency applications.
- Compact SOT-23 (TO-236) package, ideal for high-density designs.
Applications
- General-purpose amplification and switching in electronic circuits.
- Automotive systems, including power management and signal processing.
- Consumer electronics, such as audio equipment and home appliances.
- Industrial control systems and automation.
- High-frequency applications, including RF amplifiers and oscillators.
Q & A
- What is the maximum collector-emitter voltage for the SMMBT3904LT1G?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- Is the SMMBT3904LT1G RoHS compliant?
- What is the typical DC current gain (HFE) for the SMMBT3904LT1G?
The typical DC current gain (HFE) is between 40 and 70 at IC = 1.0 mAdc and VCE = 1.0 Vdc.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SMMBT3904LT1G?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.2 Vdc at IC = 10 mAdc and IB = 1.0 mAdc.
- What is the thermal resistance, junction-to-ambient (RθJA), for the SMMBT3904LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RθJA), is 556 °C/W on an FR-5 board.
- What are the junction and storage temperature ranges for the SMMBT3904LT1G?
The junction and storage temperature ranges are -55 to +150 °C.
- Is the SMMBT3904LT1G suitable for high-frequency applications?
- What package type is the SMMBT3904LT1G available in?
The SMMBT3904LT1G is available in a SOT-23 (TO-236) package.
- Is the SMMBT3904LT1G AEC-Q101 qualified?
- What are some typical applications for the SMMBT3904LT1G?
Typical applications include general-purpose amplification, automotive systems, consumer electronics, industrial control systems, and high-frequency applications.
