Overview
The BC846B215 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia (previously part of NXP USA Inc.). This transistor is designed for various general-purpose amplifier and switching applications. It is packaged in the SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VCEO (Collector-Emitter Voltage) | Open Base | - | - | 65 | V |
IC (Collector Current) | - | - | - | 100 | mA |
hFE (DC Current Gain) | VCE = 5 V; IC = 2 mA | 200 | 290 | 450 | - |
VCEsat (Collector-Emitter Saturation Voltage) | IC = 10 mA; IB = 0.5 mA | - | - | 200 | mV |
Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 250 | mW |
Tj (Junction Temperature) | - | - | - | 150 | °C |
Key Features
- General-purpose NPN bipolar junction transistor
- SMD plastic package in SOT23 (TO-236AB) format
- Collector-Emitter Voltage (VCEO) up to 65 V
- Collector Current (IC) up to 100 mA
- DC current gain (hFE) with two different gain selections
- Low collector-emitter saturation voltage (VCEsat)
- Compact surface-mount design for efficient use in modern circuits
Applications
- General-purpose switching and amplification
- Automotive applications due to its robust specifications
- Consumer electronics requiring compact and reliable transistor solutions
- Industrial control and automation systems
Q & A
- What is the collector-emitter voltage (VCEO) of the BC846B215 transistor?
The collector-emitter voltage (VCEO) of the BC846B215 transistor is up to 65 V.
- What is the maximum collector current (IC) of the BC846B215 transistor?
The maximum collector current (IC) of the BC846B215 transistor is 100 mA.
- What is the typical DC current gain (hFE) of the BC846B215 transistor?
The typical DC current gain (hFE) of the BC846B215 transistor is 290.
- What is the package type of the BC846B215 transistor?
The BC846B215 transistor is packaged in the SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- What are the common applications of the BC846B215 transistor?
The BC846B215 transistor is commonly used in general-purpose switching and amplification, automotive applications, consumer electronics, and industrial control systems.
- What is the maximum junction temperature (Tj) of the BC846B215 transistor?
The maximum junction temperature (Tj) of the BC846B215 transistor is 150 °C.
- What is the total power dissipation (Ptot) of the BC846B215 transistor at 25 °C ambient temperature?
The total power dissipation (Ptot) of the BC846B215 transistor at 25 °C ambient temperature is 250 mW.
- Is the BC846B215 transistor suitable for automotive applications?
Yes, the BC846B215 transistor is suitable for automotive applications due to its robust specifications and reliability.
- What is the collector-emitter saturation voltage (VCEsat) of the BC846B215 transistor?
The collector-emitter saturation voltage (VCEsat) of the BC846B215 transistor is typically up to 200 mV.
- Where can I find detailed specifications and datasheets for the BC846B215 transistor?
Detailed specifications and datasheets for the BC846B215 transistor can be found on the official Nexperia website, as well as on distributor websites such as Mouser, Digi-Key, and Avnet.