BC846B215
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NXP USA Inc. BC846B215

Manufacturer No:
BC846B215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
0.1A, 65V, NPN, TO 236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846B215 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Nexperia (previously part of NXP USA Inc.). This transistor is designed for various general-purpose amplifier and switching applications. It is packaged in the SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCEO (Collector-Emitter Voltage) Open Base - - 65 V
IC (Collector Current) - - - 100 mA
hFE (DC Current Gain) VCE = 5 V; IC = 2 mA 200 290 450 -
VCEsat (Collector-Emitter Saturation Voltage) IC = 10 mA; IB = 0.5 mA - - 200 mV
Ptot (Total Power Dissipation) Tamb ≤ 25 °C - - 250 mW
Tj (Junction Temperature) - - - 150 °C

Key Features

  • General-purpose NPN bipolar junction transistor
  • SMD plastic package in SOT23 (TO-236AB) format
  • Collector-Emitter Voltage (VCEO) up to 65 V
  • Collector Current (IC) up to 100 mA
  • DC current gain (hFE) with two different gain selections
  • Low collector-emitter saturation voltage (VCEsat)
  • Compact surface-mount design for efficient use in modern circuits

Applications

  • General-purpose switching and amplification
  • Automotive applications due to its robust specifications
  • Consumer electronics requiring compact and reliable transistor solutions
  • Industrial control and automation systems

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC846B215 transistor?

    The collector-emitter voltage (VCEO) of the BC846B215 transistor is up to 65 V.

  2. What is the maximum collector current (IC) of the BC846B215 transistor?

    The maximum collector current (IC) of the BC846B215 transistor is 100 mA.

  3. What is the typical DC current gain (hFE) of the BC846B215 transistor?

    The typical DC current gain (hFE) of the BC846B215 transistor is 290.

  4. What is the package type of the BC846B215 transistor?

    The BC846B215 transistor is packaged in the SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  5. What are the common applications of the BC846B215 transistor?

    The BC846B215 transistor is commonly used in general-purpose switching and amplification, automotive applications, consumer electronics, and industrial control systems.

  6. What is the maximum junction temperature (Tj) of the BC846B215 transistor?

    The maximum junction temperature (Tj) of the BC846B215 transistor is 150 °C.

  7. What is the total power dissipation (Ptot) of the BC846B215 transistor at 25 °C ambient temperature?

    The total power dissipation (Ptot) of the BC846B215 transistor at 25 °C ambient temperature is 250 mW.

  8. Is the BC846B215 transistor suitable for automotive applications?

    Yes, the BC846B215 transistor is suitable for automotive applications due to its robust specifications and reliability.

  9. What is the collector-emitter saturation voltage (VCEsat) of the BC846B215 transistor?

    The collector-emitter saturation voltage (VCEsat) of the BC846B215 transistor is typically up to 200 mV.

  10. Where can I find detailed specifications and datasheets for the BC846B215 transistor?

    Detailed specifications and datasheets for the BC846B215 transistor can be found on the official Nexperia website, as well as on distributor websites such as Mouser, Digi-Key, and Avnet.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC846B215 BC846,215 BC846B,215
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - NPN NPN
Current - Collector (Ic) (Max) - 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) - 65 V 65 V
Vce Saturation (Max) @ Ib, Ic - 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce - 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max - 250 mW 250 mW
Frequency - Transition - 100MHz 100MHz
Operating Temperature - 150°C (TJ) 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - TO-236AB TO-236AB

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