Overview
The NSVMUN5237T1G is a digital transistor from onsemi, part of the MUN2237, MMUN2237L, MUN5237 series. This component integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The NSVMUN5237T1G is particularly suited for automotive and other applications requiring unique site and control change requirements, as it is AEC-Q101 qualified and PPAP capable.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.13 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | R1 | 32.9 | 47 | 61.1 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 1.7 | 2.1 | 2.6 | - |
| Total Device Dissipation at TA = 25°C | PD | 202 | - | 310 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 618 | - | 403 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact packaging options such as SC-70/SOT-323 reduce the overall footprint on the PCB.
- Reduces Component Count: By integrating the bias resistors into the transistor, the overall component count is decreased.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality and reliability standards.
- Pb-Free Packages: Available in lead-free packages, making it compliant with environmental regulations.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Suitable for industrial control circuits where reliability and compact design are crucial.
- Consumer Electronics: Can be used in various consumer electronic devices requiring efficient and space-saving designs.
- General Purpose Switching: Applicable in general-purpose switching applications where a simple and reliable transistor is needed.
Q & A
- What is the NSVMUN5237T1G?
The NSVMUN5237T1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.
- What are the key benefits of using the NSVMUN5237T1G?
It simplifies circuit design, reduces board space, and decreases the overall component count.
- What is the typical DC current gain (hFE) of the NSVMUN5237T1G?
The typical DC current gain (hFE) is 140.
- What is the maximum collector-emitter saturation voltage (VCE(sat))?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 V.
- What are the thermal characteristics of the NSVMUN5237T1G?
The total device dissipation at TA = 25°C is 202 mW, and the thermal resistance, junction to ambient, is 618 °C/W.
- Is the NSVMUN5237T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other stringent applications.
- What are the package options available for the NSVMUN5237T1G?
The NSVMUN5237T1G is available in the SC-70/SOT-323 package.
- What is the junction and storage temperature range for the NSVMUN5237T1G?
The junction and storage temperature range is -55°C to +150°C.
- Is the NSVMUN5237T1G lead-free?
Yes, it is available in lead-free packages.
- What are some common applications for the NSVMUN5237T1G?
It is commonly used in automotive systems, industrial control systems, consumer electronics, and general-purpose switching applications.
