BC857CQCZ
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Nexperia USA Inc. BC857CQCZ

Manufacturer No:
BC857CQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQCZ is a bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is part of the BC857XQC-Q series, which is designed for general-purpose applications. It is a PNP transistor, known for its reliability and performance in a variety of electronic circuits.

Key Specifications

ParameterValue
Type NumberBC857CQCZ
PackageDFN1412D-3, Surface Mount, Wettable Flank
Channel TypePNP
VCEO [max]45 V
IC [max]100 mA
fT [min]100 MHz
Ptot360 mW
hFE [min]100 (at IC = 2 mA, VCE = 5 V)
hFE [max]300 (at IC = 2 mA, VCE = 5 V)
TJ [max]150 °C

Key Features

  • High Current Gain: The BC857CQCZ has a high current gain (hFE) range of 100 to 300, making it suitable for a wide range of applications.
  • High Frequency Operation: With a transition frequency (fT) of 100 MHz, this transistor is capable of high-frequency operation.
  • Compact Package: The DFN1412D-3 package is surface mount and has a wettable flank, which enhances solderability and reduces the risk of solder bridging.
  • Low Power Consumption: The transistor has a total power dissipation (Ptot) of 360 mW, making it energy-efficient.

Applications

The BC857CQCZ is versatile and can be used in various general-purpose applications, including:

  • Amplifier Circuits: Due to its high current gain and frequency response, it is suitable for amplifier circuits.
  • Switching Circuits: Its high switching speed makes it ideal for switching applications.
  • Automotive Electronics: Although not specifically automotive-qualified, its robustness can be beneficial in certain automotive electronic systems.
  • Consumer Electronics: It can be used in a variety of consumer electronic devices requiring reliable transistor performance.

Q & A

  1. What is the type of the BC857CQCZ transistor?
    The BC857CQCZ is a PNP bipolar junction transistor (BJT).
  2. What is the maximum collector-emitter voltage (VCEO) of the BC857CQCZ?
    The maximum collector-emitter voltage (VCEO) is 45 V.
  3. What is the maximum collector current (IC) of the BC857CQCZ?
    The maximum collector current (IC) is 100 mA.
  4. What is the transition frequency (fT) of the BC857CQCZ?
    The transition frequency (fT) is 100 MHz.
  5. What is the package type of the BC857CQCZ?
    The package type is DFN1412D-3, which is a surface mount package with a wettable flank.
  6. What is the total power dissipation (Ptot) of the BC857CQCZ?
    The total power dissipation (Ptot) is 360 mW.
  7. What is the maximum junction temperature (TJ) of the BC857CQCZ?
    The maximum junction temperature (TJ) is 150 °C.
  8. Is the BC857CQCZ automotive-qualified?
    No, the BC857CQCZ is not specifically automotive-qualified but can be used in general-purpose applications.
  9. What are some common applications of the BC857CQCZ?
    It is commonly used in amplifier circuits, switching circuits, and various consumer electronic devices.
  10. Where can I find detailed specifications and datasheets for the BC857CQCZ?
    Detailed specifications and datasheets can be found on the Nexperia website or through distributors like Digi-Key.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:850mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC857CQCZ BC857BQCZ BC857CQAZ BC857CQBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Obsolete
Transistor Type PNP PNP PNP -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 850mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 360 mW 360 mW 280 mW 340 mW
Frequency - Transition 100MHz 100MHz 100MHz -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1010D-3 DFN1110D-3

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