BC846BQBZ
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Nexperia USA Inc. BC846BQBZ

Manufacturer No:
BC846BQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BQBZ is an NPN general-purpose bipolar transistor produced by Nexperia USA Inc. This transistor is part of the BC846 series, known for its versatility in various electronic applications. It is packaged in a 3-XDFN (Exposed Pad) surface-mounted device (SMD) format, which is compact and suitable for modern electronic designs. The BC846BQBZ is qualified according to AEC-Q101, making it suitable for automotive applications, as well as other industrial, consumer, and mobile devices.

Key Specifications

Parameter Value Unit
Transistor Polarity NPN -
Collector-Base Voltage (Vcbo) 65 V
Emitter-Base Voltage (Vebo) 6 V
Collector-Emitter Voltage (Vceo) 65 V
Continuous Collector Current (Ic) 100 mA
Power Dissipation (Pd) 420 mW
Maximum Operating Temperature (Tj) 150 °C
Minimum Operating Temperature -55 °C
DC Current Gain (hfe) Min/Max 200 / 450 - at 2 mA, 5 V
Gain Bandwidth Product (fT) 100 MHz
Package Type 3-XDFN Exposed Pad -

Key Features

  • Compact Package: The 3-XDFN Exposed Pad package is small and suitable for space-constrained designs.
  • Automotive Qualified: AEC-Q101 qualified, making it reliable for automotive applications.
  • High Gain Selection: Available with different gain selections to suit various application requirements.
  • General-Purpose Use: Suitable for both switching and amplification applications.
  • High Temperature Operation: Maximum junction temperature of 150°C, ensuring reliability in high-temperature environments.
  • Low Leakage Current: Low ICBO (leakage current) of 15 nA, which is beneficial for power-saving designs.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Electronics: Used in industrial control systems, power supplies, and other industrial equipment.
  • Consumer Electronics: Found in consumer devices such as audio equipment, home appliances, and mobile devices.
  • Power and Computing: Used in power management circuits and computing hardware.
  • Wearables and Mobile Devices: Suitable for use in wearables and mobile devices due to its compact size and low power consumption.

Q & A

  1. What is the maximum collector-emitter voltage of the BC846BQBZ transistor?

    The maximum collector-emitter voltage (Vceo) is 65 V.

  2. What is the package type of the BC846BQBZ transistor?

    The package type is 3-XDFN Exposed Pad.

  3. Is the BC846BQBZ transistor suitable for automotive applications?
  4. What is the maximum operating temperature of the BC846BQBZ transistor?

    The maximum operating temperature (Tj) is 150°C.

  5. What is the minimum operating temperature of the BC846BQBZ transistor?

    The minimum operating temperature is -55°C.

  6. What are the typical applications of the BC846BQBZ transistor?

    It is used in automotive, industrial, consumer electronics, power management, and mobile devices.

  7. What is the power dissipation (Pd) of the BC846BQBZ transistor?

    The power dissipation (Pd) is 420 mW.

  8. What are the DC current gain (hfe) values for the BC846BQBZ transistor?

    The DC current gain (hfe) is between 200 and 450 at 2 mA, 5 V.

  9. What is the gain bandwidth product (fT) of the BC846BQBZ transistor?

    The gain bandwidth product (fT) is 100 MHz.

  10. Is the BC846BQBZ transistor RoHS compliant?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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