BUK9212-55B,118
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Nexperia USA Inc. BUK9212-55B,118

Manufacturer No:
BUK9212-55B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 75A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The BUK9212-55B,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic DPAK (SOT428) package. It has been designed and qualified to the AEC Q101 standard, making it suitable for automotive critical applications. Although the product is currently discontinued, it remains relevant for understanding and replacing similar components in existing designs.

Key Specifications

Parameter Value
Type number BUK9212-55B
Package version SOT428 (DPAK)
Product status End of life
Channel type N-channel
Number of transistors 1
V DS [max] (V) 55
R DSon [max] @ V GS = 10 V (mΩ) 10
R DSon [max] @ V GS = 5 V (mΩ) 12
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ) 13
T j [max] (°C) 185
I D [max] (A) 83
Q GD [typ] (nC) 13
P tot [max] (W) 167
Q r [typ] (nC) 53
V GSth [typ] (V) 1.5
Automotive qualified Yes (AEC Q101 compliant)
C iss [typ] (pF) 2640
C oss [typ] (pF) 360

Key Features

  • AEC Q101 compliant, ensuring suitability for automotive critical applications.
  • Low conduction losses due to low on-state resistance.
  • Suitable for logic level gate drive sources.
  • Suitable for thermally demanding environments with a maximum junction temperature rating of 185 °C.

Applications

  • 12 V and 24 V loads.
  • Automotive systems.
  • General purpose power switching.
  • Motors, lamps, and solenoids.

Q & A

  1. What is the BUK9212-55B,118?

    The BUK9212-55B,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.

  2. What package type does the BUK9212-55B,118 use?

    The device is packaged in a plastic DPAK (SOT428) package.

  3. Is the BUK9212-55B,118 suitable for automotive applications?

    Yes, it is AEC Q101 compliant, making it suitable for automotive critical applications.

  4. What is the maximum drain-source voltage (V DS) of the BUK9212-55B,118?

    The maximum drain-source voltage (V DS) is 55 V.

  5. What is the maximum on-state resistance (R DSon) at V GS = 10 V?

    The maximum on-state resistance (R DSon) at V GS = 10 V is 10 mΩ.

  6. What is the maximum junction temperature (T j) of the BUK9212-55B,118?

    The maximum junction temperature (T j) is 185 °C.

  7. What are some typical applications of the BUK9212-55B,118?

    Typical applications include 12 V and 24 V loads, automotive systems, general purpose power switching, and motors, lamps, and solenoids.

  8. Is the BUK9212-55B,118 still in production?

    No, the BUK9212-55B,118 is currently discontinued.

  9. What is the typical gate-source threshold voltage (V GSth) of the BUK9212-55B,118?

    The typical gate-source threshold voltage (V GSth) is 1.5 V.

  10. What are the key benefits of using the BUK9212-55B,118?

    The key benefits include low conduction losses, suitability for logic level gate drive sources, and suitability for thermally demanding environments.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:3519 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 185°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number BUK9212-55B,118 BUK9612-55B,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 31 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 3519 pF @ 25 V 3693 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 167W (Tc) 157W (Tc)
Operating Temperature -55°C ~ 185°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK D2PAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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