STL9N60M2
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STMicroelectronics STL9N60M2

Manufacturer No:
STL9N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 4.8A PWRFLAT56
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL9N60M2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the MDmesh M2 series, known for its low on-resistance and gate charge, making it one of the world's leading Power MOSFETs in terms of efficiency and performance. The STL9N60M2 is packaged in a PowerFLAT 5x6 HV package, which is designed to optimize thermal performance and reduce the overall size of the device.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 4.8 A
RDS(on) (On-Resistance) 0.76 Ω
PD (Power Dissipation) 48 W
Package PowerFLAT 5x6 HV

Key Features

  • Low on-resistance (RDS(on)) of 0.76 Ω typical, ensuring high efficiency and minimal power loss.
  • Low gate charge (Qg) for improved switching performance.
  • High drain-source voltage (VDS) of 600 V, suitable for high-voltage applications.
  • High drain current (ID) of 4.8 A, supporting a wide range of power requirements.
  • PowerFLAT 5x6 HV package for enhanced thermal performance and compact design.

Applications

  • Switch-Mode Power Supplies (SMPS): Ideal for high-efficiency power conversion in SMPS designs.
  • Motor Control: Suitable for motor drive applications requiring high power and efficiency.
  • Power Factor Correction (PFC): Used in PFC circuits to improve power factor and reduce harmonic distortion.
  • High-Voltage DC-DC Converters: Applicable in high-voltage DC-DC conversion systems.
  • Industrial and Automotive Systems: Can be used in various industrial and automotive power management systems.

Q & A

  1. What is the typical on-resistance of the STL9N60M2?

    The typical on-resistance (RDS(on)) of the STL9N60M2 is 0.76 Ω.

  2. What is the maximum drain-source voltage (VDS) of the STL9N60M2?

    The maximum drain-source voltage (VDS) of the STL9N60M2 is 600 V.

  3. What is the maximum drain current (ID) of the STL9N60M2?

    The maximum drain current (ID) of the STL9N60M2 is 4.8 A.

  4. What package type is used for the STL9N60M2?

    The STL9N60M2 is packaged in a PowerFLAT 5x6 HV package.

  5. What are some typical applications of the STL9N60M2?

    The STL9N60M2 is typically used in switch-mode power supplies, motor control, power factor correction, high-voltage DC-DC converters, and various industrial and automotive systems.

  6. What is the power dissipation (PD) of the STL9N60M2?

    The power dissipation (PD) of the STL9N60M2 is 48 W.

  7. Does the STL9N60M2 have low gate charge?

    Yes, the STL9N60M2 has low gate charge (Qg) for improved switching performance.

  8. Is the STL9N60M2 part of a specific series by STMicroelectronics?

    Yes, the STL9N60M2 is part of the MDmesh M2 series by STMicroelectronics.

  9. What are the benefits of the MDmesh M2 technology?

    The MDmesh M2 technology offers low on-resistance, low gate charge, and excellent switching performance, making it highly efficient and suitable for various high-power applications.

  10. Can the STL9N60M2 be used in high-temperature environments?

    While the STL9N60M2 is robust, it is important to refer to the datasheet for specific temperature ratings and operating conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:860mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL9N60M2 STL9N65M2 STL7N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 860mOhm @ 2.4A, 10V - 1.05Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V - 8.8 nC @ 10 V
Vgs (Max) ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 100 V - 271 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 48W (Tc) - 4W (Ta), 67W (Tc)
Operating Temperature 150°C (TJ) - 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV - PowerFLAT™ (5x5)
Package / Case 8-PowerVDFN - 8-PowerVDFN

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