STP22NM60N
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STMicroelectronics STP22NM60N

Manufacturer No:
STP22NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 16A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP22NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its high efficiency and low on-resistance, making it suitable for demanding applications. The STP22NM60N features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world’s lowest on-resistance and gate charge values. This makes it an ideal choice for high-efficiency converters.

Key Specifications

Symbol Parameter Value Unit
VDS Drain-Source Voltage 650 V
RDS(on)max. On-Resistance (maximum) 0.22 Ω
ID Drain Current (continuous) at TC = 25 °C 16 A
IDM Drain Current (pulsed) 64 A
VGS Gate-Source Voltage ± 30 V
Tj Operating Junction Temperature Range -55 to 150 °C
PTOT Total Dissipation at TC = 25 °C 125 W
Rthj-case Thermal Resistance Junction-Case 1 °C/W
Rthj-amb Thermal Resistance Junction-Ambient 62.5 °C/W

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • High efficiency due to low on-resistance and gate charge
  • MDmesh™ II technology for enhanced performance
  • I²PAK package for compact and reliable design

Applications

The STP22NM60N is suitable for various high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Industrial and automotive power systems

Q & A

  1. What is the maximum drain-source voltage of the STP22NM60N?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STP22NM60N?

    The typical on-resistance (RDS(on)) is 0.22 Ω.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 16 A.

  4. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 64 A.

  5. What is the operating junction temperature range?

    The operating junction temperature range (Tj) is -55 to 150 °C.

  6. What is the thermal resistance junction-case?

    The thermal resistance junction-case (Rthj-case) is 1 °C/W.

  7. What is the thermal resistance junction-ambient?

    The thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.

  8. What technology is used in the STP22NM60N?

    The STP22NM60N uses the second generation of MDmesh™ technology.

  9. What package type is the STP22NM60N available in?

    The STP22NM60N is available in the I²PAK package.

  10. What are some typical applications for the STP22NM60N?

    Typical applications include power supplies, motor control systems, high-frequency switching circuits, and industrial and automotive power systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP22NM60N STP26NM60N STP24NM60N STP23NM60N STP25NM60N STP21NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 20A (Tc) 17A (Tc) 19A (Tc) 21A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 8A, 10V 165mOhm @ 10A, 10V 190mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 60 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V 1800 pF @ 50 V 1400 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1900 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 125W (Tc) 140W (Tc) 125W (Tc) 150W (Tc) 160W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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