Overview
The STD4NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer high performance and reliability in various high-power applications. It features a drain-source voltage (VDS) of 600 V, a typical on-resistance (RDS(on)) of 1.7 Ω, and a continuous drain current (ID) of 4 A. The MOSFET is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in different ECOPACK grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 600 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Continuous drain current (ID) at TC = 25 °C | 4 | A |
| Continuous drain current (ID) at TC = 100 °C | 2.5 | A |
| Pulsed drain current (IDM) | 16 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 70 | W |
| Thermal resistance, junction-to-case (RthJC) | 1.79 | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 50 | °C/W |
| Gate threshold voltage (VGS(th)) | 3.00 - 4.50 | V |
| Static drain-source on-resistance (RDS(on)) | 1.7 - 2 | Ω |
| Total gate charge (Qg) | 18.8 - 26 | nC |
Key Features
- Zener Protection: The device is Zener-protected, enhancing its robustness against voltage spikes.
- SuperMESH Technology: Developed using STMicroelectronics' advanced SuperMESH technology, which optimizes the PowerMESH structure for reduced on-resistance and improved dv/dt capability.
- Low Intrinsic Capacitance: Features very low intrinsic capacitance, which is beneficial for high-frequency applications.
- High Avalanche Capability: 100% avalanche tested with a single pulse avalanche energy (EAS) of 120 mJ.
- Environmental Compliance: Available in ECOPACK packages, ensuring environmental compliance.
Applications
The STD4NK60ZT4 is suitable for a variety of high-power applications, including:
- Switching Applications: Ideal for power switching in high-voltage systems due to its low on-resistance and high dv/dt capability.
- Power Supplies: Can be used in high-voltage power supplies, DC-DC converters, and other power management systems.
- Motor Control: Suitable for motor control applications requiring high current and voltage handling.
- Industrial Automation: Used in various industrial automation systems where high reliability and performance are critical.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD4NK60ZT4?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STD4NK60ZT4?
The typical on-resistance (RDS(on)) is 1.7 Ω.
- What is the continuous drain current (ID) at 25 °C for the STD4NK60ZT4?
The continuous drain current (ID) at 25 °C is 4 A.
- What is the thermal resistance, junction-to-case (RthJC), of the STD4NK60ZT4?
The thermal resistance, junction-to-case (RthJC), is 1.79 °C/W.
- Is the STD4NK60ZT4 Zener-protected?
Yes, the device is Zener-protected.
- What technology is used in the development of the STD4NK60ZT4?
The device is developed using STMicroelectronics' SuperMESH technology.
- What is the single pulse avalanche energy (EAS) of the STD4NK60ZT4?
The single pulse avalanche energy (EAS) is 120 mJ.
- What is the typical gate charge (Qg) of the STD4NK60ZT4?
The typical total gate charge (Qg) is between 18.8 and 26 nC.
- In what package is the STD4NK60ZT4 available?
The device is available in a DPAK (TO-252) package.
- Is the STD4NK60ZT4 environmentally compliant?
Yes, it is available in ECOPACK packages, ensuring environmental compliance.
