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STD3NK60ZT4
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STMicroelectronics STD3NK60ZT4

Manufacturer No:
STD3NK60ZT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 2.4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3NK60ZT4 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of STMicroelectronics' extensive portfolio of power MOSFETs, designed to meet the demands of various high-power applications. The STD3NK60ZT4 is characterized by its high dv/dt capability, making it suitable for the most demanding environments.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 3.2 Ohm (typ.)
ID (Drain Current) 2.4 A
PD (Power Dissipation) 45 W
VGS(th) (Threshold Voltage) 3.75 V (typ.)
Package DPAK
Operating Temperature -55°C to 150°C
RoHS Compliance Ecopack2

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Zener-protected

Applications

The STD3NK60ZT4 is designed for use in various high-power applications, including:

  • Industrial power supplies and converters
  • Automotive systems requiring high reliability and performance
  • Switch-mode power supplies (SMPS)
  • Data center power systems
  • Solar microinverters and other renewable energy systems

Q & A

  1. What is the maximum drain-source voltage of the STD3NK60ZT4?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD3NK60ZT4?

    The typical on-resistance (RDS(on)) is 3.2 Ohm.

  3. What is the maximum drain current of the STD3NK60ZT4?

    The maximum drain current (ID) is 2.4 A.

  4. What is the power dissipation capability of the STD3NK60ZT4?

    The power dissipation (PD) is 45 W.

  5. What is the threshold voltage of the STD3NK60ZT4?

    The threshold voltage (VGS(th)) is typically 3.75 V.

  6. In what package is the STD3NK60ZT4 available?

    The STD3NK60ZT4 is available in a DPAK package.

  7. What is the operating temperature range of the STD3NK60ZT4?

    The operating temperature range is -55°C to 150°C.

  8. Is the STD3NK60ZT4 RoHS compliant?

    Yes, the STD3NK60ZT4 is RoHS compliant with an Ecopack2 rating.

  9. What are some key applications for the STD3NK60ZT4?

    Key applications include industrial power supplies, automotive systems, switch-mode power supplies (SMPS), data center power systems, and solar microinverters.

  10. What technology is used in the STD3NK60ZT4?

    The STD3NK60ZT4 uses STMicroelectronics' SuperMESH™ technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:311 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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$1.36
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Similar Products

Part Number STD3NK60ZT4 STD4NK60ZT4 STD3NK80ZT4 STD3NK90ZT4 STD5NK60ZT4 STD3NK50ZT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Not For New Designs Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 900 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc) 4A (Tc) 2.5A (Tc) 3A (Tc) 5A (Tc) 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V 2Ohm @ 2A, 10V 4.5Ohm @ 1.25A, 10V 4.8Ohm @ 1.5A, 10V 1.6Ohm @ 2.5A, 10V 3.3Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V 26 nC @ 10 V 19 nC @ 10 V 22.7 nC @ 10 V 34 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 311 pF @ 25 V 510 pF @ 25 V 485 pF @ 25 V 590 pF @ 25 V 690 pF @ 25 V 280 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 70W (Tc) 90W (Tc) 90W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK TO-252 (D-Pak) DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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