Overview
The PSMN2R0-30YLE,115 is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed using TrenchMOS technology, which offers superior performance and efficiency. It is packaged in the LFPAK56 (Power-SO8) package, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (ID) | 100 A (Tc) |
| On-State Resistance (Rds(on)) | 2 mΩ @ 25°C, 10 V |
| Power Dissipation (Pd) | 272 W (Tc) |
| Package | LFPAK56 (Power-SO8) |
| Operating Temperature Range | -55°C to 150°C |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Key Features
- High Efficiency: The PSMN2R0-30YLE,115 features a low on-state resistance of 2 mΩ, ensuring minimal power loss during operation.
- High Current Capability: With a continuous drain current of 100 A, this MOSFET is suitable for high-power applications.
- Logic Level Operation: This MOSFET can be driven by logic level signals, making it compatible with a wide range of control circuits.
- Compact Package: The LFPAK56 package offers a compact footprint while maintaining high thermal performance.
- Environmental Compliance: The device is ROHS3 compliant, ensuring it meets environmental standards for hazardous substances.
Applications
- Power Management: Suitable for power supply units, DC-DC converters, and other power management circuits.
- Motor Control: Can be used in motor drive applications due to its high current and low on-state resistance.
- Switching Circuits: Ideal for high-frequency switching applications such as inverter circuits and power factor correction.
- Automotive Systems: Applicable in automotive systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain to source voltage (Vdss) of the PSMN2R0-30YLE,115?
The maximum drain to source voltage (Vdss) is 30 V.
- What is the continuous drain current (ID) of this MOSFET?
The continuous drain current (ID) is 100 A (Tc).
- What is the on-state resistance (Rds(on)) of the PSMN2R0-30YLE,115?
The on-state resistance (Rds(on)) is 2 mΩ @ 25°C, 10 V.
- In what package is the PSMN2R0-30YLE,115 available?
The PSMN2R0-30YLE,115 is available in the LFPAK56 (Power-SO8) package.
- Is the PSMN2R0-30YLE,115 ROHS compliant?
Yes, the PSMN2R0-30YLE,115 is ROHS3 compliant.
- What is the operating temperature range of this MOSFET?
The operating temperature range is -55°C to 150°C.
- What are some common applications for the PSMN2R0-30YLE,115?
Common applications include power management, motor control, switching circuits, and automotive systems.
- Can the PSMN2R0-30YLE,115 be driven by logic level signals?
Yes, this MOSFET can be driven by logic level signals.
- What is the moisture sensitivity level (MSL) of the PSMN2R0-30YLE,115?
The moisture sensitivity level (MSL) is 1 (Unlimited).
- What is the maximum power dissipation (Pd) of this MOSFET?
The maximum power dissipation (Pd) is 272 W (Tc).
