BC817-40QCH-QZ
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Nexperia USA Inc. BC817-40QCH-QZ

Manufacturer No:
BC817-40QCH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC817-40QCH-QZ is an NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is designed for high current and high power dissipation applications, making it suitable for a wide range of electronic designs. It is available in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-restricted applications.

The BC817-40QCH-QZ is part of the BC817 series, which offers three current gain selections, providing flexibility in design. It is also qualified according to AEC-Q101, making it recommended for use in automotive applications.

Key Specifications

Parameter Value Unit
Package SOT23 (TO-236AB) -
Channel Type NPN -
Maximum Collector-Base Voltage (VCEO) 45 V
Maximum Collector Current (IC) 500 mA
Minimum DC Current Gain (hFE) 250 -
Maximum DC Current Gain (hFE) 600 -
Maximum Junction Temperature (TJ) 150 °C
Transition Frequency (fT) 100 MHz
Power Dissipation (Ptot) 250 mW
Automotive Qualified Yes -

Key Features

  • High current capability of up to 500 mA.
  • High power dissipation capability.
  • Three current gain selections (hFE) for design flexibility.
  • Available in a small SOT23 (TO-236AB) SMD package, ideal for space-restricted applications.
  • AEC-Q101 qualified, suitable for automotive applications.
  • General-purpose switching and amplification.

Applications

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for various automotive applications.
  • Industrial control systems: Used in general-purpose switching and amplification.
  • Consumer electronics: Suitable for mobile, computing, and consumer applications.
  • Power management: High power dissipation capability makes it useful in power management circuits.

Q & A

  1. What is the maximum collector current of the BC817-40QCH-QZ transistor?

    The maximum collector current is 500 mA.

  2. What package type is the BC817-40QCH-QZ transistor available in?

    The transistor is available in a SOT23 (TO-236AB) SMD package.

  3. Is the BC817-40QCH-QZ transistor qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101.

  4. What is the maximum junction temperature of the BC817-40QCH-QZ transistor?

    The maximum junction temperature is 150°C.

  5. What are the typical applications of the BC817-40QCH-QZ transistor?

    It is used in general-purpose switching and amplification, and is suitable for automotive, industrial, and consumer electronics applications.

  6. What is the transition frequency of the BC817-40QCH-QZ transistor?

    The transition frequency is 100 MHz.

  7. What is the power dissipation capability of the BC817-40QCH-QZ transistor?

    The power dissipation capability is up to 250 mW.

  8. Can the BC817-40QCH-QZ transistor be used in space-restricted applications?

    Yes, due to its small SOT23 package, it is ideal for space-restricted applications.

  9. What are the current gain selections available for the BC817-40QCH-QZ transistor?

    The transistor offers three current gain selections (hFE) for design flexibility.

  10. Is the BC817-40QCH-QZ transistor RoHS compliant?

    Yes, the transistor is RoHS compliant.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:455 mW
Frequency - Transition:100MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC817-40QCH-QZ BC817-40QBH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 455 mW 420 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1110D-3

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