2N7002P,235
  • Share:

Nexperia USA Inc. 2N7002P,235

Manufacturer No:
2N7002P,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002P,235 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of Nexperia’s extensive portfolio of power management components and is designed to offer high performance and reliability in various electronic applications. The 2N7002P,235 uses Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Value Unit
Type N-channel enhancement mode MOSFET
Drain-Source Breakdown Voltage (Vds) 60 V
Continuous Drain Current (Id) 360 mA
Drain-Source On-Resistance (Rds On) 1.6 Ω
Gate-Source Voltage (Vgs) -20 to +20 V
Threshold Voltage (Vgs(th)) 1.1 to 2.4 V
Gate Charge (Qg) 600 pC
Power Dissipation (Pd) 420 mW
Operating Temperature Range -55 to +150 °C
Package SOT23 (TO-236AB)

Key Features

  • Logic-Level Compatibility: The 2N7002P,235 is logic-level compatible, making it easy to integrate with various logic circuits.
  • Fast Switching: It features very fast switching times, which is crucial for high-speed applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, ensuring reliability and robustness for automotive and other demanding applications.
  • Low On-Resistance: Offers low Rds On of 1.6 Ω, reducing energy consumption and heat in the circuit.
  • Compact Package: Packaged in a small SOT23 package, ideal for space-constrained designs.

Applications

  • Motor Control: Used in motor control circuits for applications such as variable frequency drives (VFDs), robotics, and electric vehicles.
  • Switching Devices: Employed as switching devices in digital and analog circuits, including data switches and multiplexers.
  • Power Management: Utilized in power management circuits for efficient control of electronic signals.
  • Relay Drivers and High-Speed Line Drivers: Suitable for relay driver and high-speed line driver applications due to its fast switching capabilities.
  • Low-Side Load Switches: Used in low-side load switch applications where fast and reliable switching is required.

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002P,235?

    The drain-source breakdown voltage (Vds) is 60 V.

  2. What is the continuous drain current rating of the 2N7002P,235?

    The continuous drain current (Id) is 360 mA.

  3. What is the typical on-resistance of the 2N7002P,235?

    The drain-source on-resistance (Rds On) is typically 1.6 Ω.

  4. What is the gate-source voltage range for the 2N7002P,235?

    The gate-source voltage (Vgs) range is -20 V to +20 V.

  5. What is the threshold voltage of the 2N7002P,235?

    The threshold voltage (Vgs(th)) is between 1.1 V and 2.4 V.

  6. What is the maximum gate charge for the 2N7002P,235?

    The maximum gate charge (Qg) is 600 pC.

  7. What is the maximum power dissipation of the 2N7002P,235?

    The maximum power dissipation (Pd) is 420 mW.

  8. What is the operating temperature range for the 2N7002P,235?

    The operating temperature range is -55°C to +150°C.

  9. Is the 2N7002P,235 AEC-Q101 qualified?

    Yes, the 2N7002P,235 is AEC-Q101 qualified.

  10. What package type is used for the 2N7002P,235?

    The 2N7002P,235 is packaged in a SOT23 (TO-236AB) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.26
418

Please send RFQ , we will respond immediately.

Same Series
2N7002P,215
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB

Similar Products

Part Number 2N7002P,235 2N7002,235 2N7002P,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 300mA (Tc) 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.5V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V - 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 350mW (Ta) 830mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
PMV65XP,215
PMV65XP,215
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
PCMF3USB30Z
PCMF3USB30Z
Nexperia USA Inc.
CMC 6LN SMD ESD
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP