2N7002P,235
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Nexperia USA Inc. 2N7002P,235

Manufacturer No:
2N7002P,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 360MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N7002P,235 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of Nexperia’s extensive portfolio of power management components and is designed to offer high performance and reliability in various electronic applications. The 2N7002P,235 uses Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Value Unit
Type N-channel enhancement mode MOSFET
Drain-Source Breakdown Voltage (Vds) 60 V
Continuous Drain Current (Id) 360 mA
Drain-Source On-Resistance (Rds On) 1.6 Ω
Gate-Source Voltage (Vgs) -20 to +20 V
Threshold Voltage (Vgs(th)) 1.1 to 2.4 V
Gate Charge (Qg) 600 pC
Power Dissipation (Pd) 420 mW
Operating Temperature Range -55 to +150 °C
Package SOT23 (TO-236AB)

Key Features

  • Logic-Level Compatibility: The 2N7002P,235 is logic-level compatible, making it easy to integrate with various logic circuits.
  • Fast Switching: It features very fast switching times, which is crucial for high-speed applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • AEC-Q101 Qualified: Qualified to the AEC-Q101 standard, ensuring reliability and robustness for automotive and other demanding applications.
  • Low On-Resistance: Offers low Rds On of 1.6 Ω, reducing energy consumption and heat in the circuit.
  • Compact Package: Packaged in a small SOT23 package, ideal for space-constrained designs.

Applications

  • Motor Control: Used in motor control circuits for applications such as variable frequency drives (VFDs), robotics, and electric vehicles.
  • Switching Devices: Employed as switching devices in digital and analog circuits, including data switches and multiplexers.
  • Power Management: Utilized in power management circuits for efficient control of electronic signals.
  • Relay Drivers and High-Speed Line Drivers: Suitable for relay driver and high-speed line driver applications due to its fast switching capabilities.
  • Low-Side Load Switches: Used in low-side load switch applications where fast and reliable switching is required.

Q & A

  1. What is the drain-source breakdown voltage of the 2N7002P,235?

    The drain-source breakdown voltage (Vds) is 60 V.

  2. What is the continuous drain current rating of the 2N7002P,235?

    The continuous drain current (Id) is 360 mA.

  3. What is the typical on-resistance of the 2N7002P,235?

    The drain-source on-resistance (Rds On) is typically 1.6 Ω.

  4. What is the gate-source voltage range for the 2N7002P,235?

    The gate-source voltage (Vgs) range is -20 V to +20 V.

  5. What is the threshold voltage of the 2N7002P,235?

    The threshold voltage (Vgs(th)) is between 1.1 V and 2.4 V.

  6. What is the maximum gate charge for the 2N7002P,235?

    The maximum gate charge (Qg) is 600 pC.

  7. What is the maximum power dissipation of the 2N7002P,235?

    The maximum power dissipation (Pd) is 420 mW.

  8. What is the operating temperature range for the 2N7002P,235?

    The operating temperature range is -55°C to +150°C.

  9. Is the 2N7002P,235 AEC-Q101 qualified?

    Yes, the 2N7002P,235 is AEC-Q101 qualified.

  10. What package type is used for the 2N7002P,235?

    The 2N7002P,235 is packaged in a SOT23 (TO-236AB) package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002P,215
2N7002P,215
MOSFET N-CH 60V 360MA TO236AB

Similar Products

Part Number 2N7002P,235 2N7002,235 2N7002P,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 300mA (Tc) 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.5V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V - 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 350mW (Ta) 830mW (Tc) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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