PSMN4R0-30YLDX
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Nexperia USA Inc. PSMN4R0-30YLDX

Manufacturer No:
PSMN4R0-30YLDX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 95A LFPAK56
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The PSMN4R0-30YLDX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive range of MOSFETs, known for their reliability and efficiency in various power management applications. The PSMN4R0-30YLDX is packaged in the LFPAK56 (Power-SO8) format, which is designed to offer excellent thermal performance and a compact footprint.

Key Specifications

Parameter Value
Channel Type N-Channel
Drain-Source Voltage (Vds) 30 V
Continuous Drain Current (Id) at Tc 95 A
Power Dissipation (Pd) at Tc 64 W
Package Type LFPAK56 (Power-SO8)
Operating Temperature Range -55°C to 150°C

Key Features

  • High continuous drain current of 95 A at Tc.
  • Low on-state resistance (Rds(on)).
  • Compact LFPAK56 (Power-SO8) package for improved thermal performance.
  • Qualified to operate up to 150°C, making it suitable for high-temperature applications.
  • Enhancement mode operation for efficient power management.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-power switching applications.
  • Automotive systems requiring high reliability and thermal performance.
  • Industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage of the PSMN4R0-30YLDX?

    The maximum drain-source voltage (Vds) is 30 V.

  2. What is the continuous drain current at Tc for the PSMN4R0-30YLDX?

    The continuous drain current (Id) at Tc is 95 A.

  3. What package type is used for the PSMN4R0-30YLDX?

    The PSMN4R0-30YLDX is packaged in the LFPAK56 (Power-SO8) format.

  4. What is the operating temperature range of the PSMN4R0-30YLDX?

    The operating temperature range is -55°C to 150°C.

  5. Is the PSMN4R0-30YLDX suitable for high-temperature applications?

    Yes, it is qualified to operate up to 150°C, making it suitable for high-temperature applications.

  6. What are some common applications for the PSMN4R0-30YLDX?

    Common applications include power supplies, motor control systems, high-power switching, automotive systems, and industrial power management.

  7. What is the power dissipation (Pd) at Tc for the PSMN4R0-30YLDX?

    The power dissipation (Pd) at Tc is 64 W.

  8. Does the PSMN4R0-30YLDX have low on-state resistance?

    Yes, it has low on-state resistance (Rds(on)).

  9. Is the PSMN4R0-30YLDX an enhancement mode MOSFET?

    Yes, it operates in enhancement mode.

  10. Where can I find detailed specifications for the PSMN4R0-30YLDX?

    Detailed specifications can be found in the datasheet available on Nexperia's website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:95A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1272 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):64W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN4R0-30YLDX PSMN6R0-30YLDX PSMN2R0-30YLDX PSMN3R0-30YLDX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc) 66A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V 6mOhm @ 15A, 10V 2mOhm @ 25A, 10V 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V 13.7 nC @ 10 V 46 nC @ 10 V 46.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1272 pF @ 15 V 832 pF @ 15 V 2969 pF @ 15 V 2939 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 64W (Tc) 47W (Tc) 142W (Tc) 91W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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