NTD20N06LT4
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onsemi NTD20N06LT4

Manufacturer No:
NTD20N06LT4
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 20A DPAK
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTD20N06LT4 is a power MOSFET from onsemi, designed for high-speed switching applications. This N-Channel MOSFET is housed in a DPAK package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is known for its low voltage and high current handling capabilities, making it a versatile component in various power management systems. The device is Pb-free and RoHS compliant, ensuring environmental sustainability. Additionally, the NTDV prefix versions are AEC-Q101 qualified, making them suitable for automotive and other applications requiring stringent quality standards.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Drain-to-Source Voltage VDSS - - 60 Vdc
Drain Current (Continuous @ TA = 25°C) ID - - 20 A
Gate-to-Source Voltage (Continuous) VGS - - ±15 Vdc
Gate Threshold Voltage VGS(th) 2.0 2.91 4.0 Vdc
Static Drain-to-Source On-Resistance RDS(on) - 37.5 46
Maximum Lead Temperature for Soldering TL - - 260 °C

Key Features

  • Low RDS(on) and VDS(on) for efficient switching
  • Low capacitances and total gate charge for high-speed operation
  • Low diode reverse recovery time and stored charge
  • AEC-Q101 qualified for automotive and other stringent applications (NTDV prefix versions)
  • Pb-free and RoHS compliant
  • Designed for low voltage, high-speed switching applications

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD20N06LT4? The maximum drain-to-source voltage is 60 Vdc.
  2. What is the typical on-resistance of the NTD20N06LT4? The typical static drain-to-source on-resistance is 37.5 mΩ.
  3. Is the NTD20N06LT4 suitable for automotive applications? Yes, the NTDV20N06LT4 version is AEC-Q101 qualified, making it suitable for automotive and other stringent applications.
  4. What is the maximum continuous drain current of the NTD20N06LT4? The maximum continuous drain current is 20 A at TA = 25°C.
  5. Is the NTD20N06LT4 Pb-free and RoHS compliant? Yes, the device is Pb-free and RoHS compliant.
  6. What are the typical applications of the NTD20N06LT4? Typical applications include power supplies, converters, power motor controls, and bridge circuits.
  7. What is the gate threshold voltage range of the NTD20N06LT4? The gate threshold voltage range is from 2.0 V to 4.0 Vdc.
  8. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering is 260°C.
  9. Does the NTD20N06LT4 have low capacitances? Yes, it is designed with low capacitances for high-speed operation.
  10. What is the reverse recovery time of the NTD20N06LT4? The reverse recovery time is approximately 42 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:990 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.36W (Ta), 60W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number NTD20N06LT4 NTD20N06LT4G NTD24N06LT4 NTD20N06T4
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 20A (Ta) 24A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V - 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 10A, 5V 48mOhm @ 10A, 5V 45mOhm @ 10A, 5V 46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V 32 nC @ 5 V 32 nC @ 5 V 30 nC @ 10 V
Vgs (Max) ±15V ±15V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 990 pF @ 25 V 990 pF @ 25 V 1140 pF @ 25 V 1015 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 1.36W (Ta), 60W (Tj) 1.36W (Ta), 60W (Tj) - 1.88W (Ta), 60W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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