NTNS3A65PZT5G
  • Share:

onsemi NTNS3A65PZT5G

Manufacturer No:
NTNS3A65PZT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 281MA SOT883
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTNS3A65PZT5G is a P-Channel MOSFET produced by onsemi. This component is designed for surface mount applications and features a compact SOT-883 (XDFN3) package. It is suitable for a variety of electronic circuits requiring low power consumption and high efficiency. The MOSFET is lead-free and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.

Key Specifications

Parameter Description
Part Number NTNS3A65PZT5G
Description MOSFET P-Channel 20V 0.281A SOT883
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 281mA (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 155mW (Ta)
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 44pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 200mA, 4.5V
Package / Case SC-101, SOT-883 (XDFN3) (1x0.6)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Compact Package: The NTNS3A65PZT5G comes in a small SOT-883 (XDFN3) package, making it ideal for space-constrained designs.
  • Low Power Consumption: With a maximum power dissipation of 155mW, this MOSFET is suitable for low-power applications.
  • High Efficiency: The MOSFET features a low on-resistance (Rds On) of 1.3 Ohm at 200mA and 4.5V, ensuring high efficiency in switching applications.
  • Wide Operating Temperature Range: It operates over a temperature range of -55°C to 150°C, making it versatile for various environmental conditions.
  • Environmental Compliance: The component is lead-free and RoHS compliant, aligning with current environmental regulations.

Applications

  • Power Management: Suitable for power management circuits in portable electronics, battery-powered devices, and other low-power systems.
  • Switching Circuits: Ideal for use in switching circuits due to its low on-resistance and high efficiency.
  • Audio and Video Equipment: Can be used in audio and video equipment where low noise and high reliability are required.
  • Automotive Systems: Applicable in automotive systems due to its wide operating temperature range and reliability.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NTNS3A65PZT5G MOSFET?

    The maximum drain to source voltage (Vdss) is 20V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 281mA.

  3. What is the operating temperature range of the NTNS3A65PZT5G?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the maximum power dissipation of this MOSFET?

    The maximum power dissipation is 155mW (Ta).

  5. What is the gate threshold voltage (Vgs(th)) of the NTNS3A65PZT5G?

    The gate threshold voltage (Vgs(th)) is 1V at 250µA.

  6. What is the maximum gate-source voltage (Vgs) for this MOSFET?

    The maximum gate-source voltage (Vgs) is ±8V.

  7. What is the input capacitance (Ciss) of the NTNS3A65PZT5G at 10V?

    The input capacitance (Ciss) at 10V is 44pF.

  8. What is the gate charge (Qg) at 4.5V for this MOSFET?

    The gate charge (Qg) at 4.5V is 1.1nC.

  9. What is the on-resistance (Rds On) at 200mA and 4.5V for the NTNS3A65PZT5G?

    The on-resistance (Rds On) at 200mA and 4.5V is 1.3 Ohm.

  10. In what package is the NTNS3A65PZT5G available?

    The NTNS3A65PZT5G is available in the SOT-883 (XDFN3) package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:281mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:44 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):155mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883 (XDFN3) (1x0.6)
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.07
5,383

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTNS3A65PZT5G NTNS3A67PZT5G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 281mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 1.3Ohm @ 200mA, 4.5V -
Vgs(th) (Max) @ Id 1V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 44 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 155mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 (XDFN3) (1x0.6) SOT-883 (XDFN3) (1x0.6)
Package / Case 3-XFDFN 3-XFDFN

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4