NTNS3A65PZT5G
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onsemi NTNS3A65PZT5G

Manufacturer No:
NTNS3A65PZT5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 281MA SOT883
Delivery:
Payment:
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Product Introduction

Overview

The NTNS3A65PZT5G is a P-Channel MOSFET produced by onsemi. This component is designed for surface mount applications and features a compact SOT-883 (XDFN3) package. It is suitable for a variety of electronic circuits requiring low power consumption and high efficiency. The MOSFET is lead-free and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.

Key Specifications

Parameter Description
Part Number NTNS3A65PZT5G
Description MOSFET P-Channel 20V 0.281A SOT883
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 281mA (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 155mW (Ta)
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 44pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 200mA, 4.5V
Package / Case SC-101, SOT-883 (XDFN3) (1x0.6)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Compact Package: The NTNS3A65PZT5G comes in a small SOT-883 (XDFN3) package, making it ideal for space-constrained designs.
  • Low Power Consumption: With a maximum power dissipation of 155mW, this MOSFET is suitable for low-power applications.
  • High Efficiency: The MOSFET features a low on-resistance (Rds On) of 1.3 Ohm at 200mA and 4.5V, ensuring high efficiency in switching applications.
  • Wide Operating Temperature Range: It operates over a temperature range of -55°C to 150°C, making it versatile for various environmental conditions.
  • Environmental Compliance: The component is lead-free and RoHS compliant, aligning with current environmental regulations.

Applications

  • Power Management: Suitable for power management circuits in portable electronics, battery-powered devices, and other low-power systems.
  • Switching Circuits: Ideal for use in switching circuits due to its low on-resistance and high efficiency.
  • Audio and Video Equipment: Can be used in audio and video equipment where low noise and high reliability are required.
  • Automotive Systems: Applicable in automotive systems due to its wide operating temperature range and reliability.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NTNS3A65PZT5G MOSFET?

    The maximum drain to source voltage (Vdss) is 20V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 281mA.

  3. What is the operating temperature range of the NTNS3A65PZT5G?

    The operating temperature range is -55°C to 150°C (TJ).

  4. What is the maximum power dissipation of this MOSFET?

    The maximum power dissipation is 155mW (Ta).

  5. What is the gate threshold voltage (Vgs(th)) of the NTNS3A65PZT5G?

    The gate threshold voltage (Vgs(th)) is 1V at 250µA.

  6. What is the maximum gate-source voltage (Vgs) for this MOSFET?

    The maximum gate-source voltage (Vgs) is ±8V.

  7. What is the input capacitance (Ciss) of the NTNS3A65PZT5G at 10V?

    The input capacitance (Ciss) at 10V is 44pF.

  8. What is the gate charge (Qg) at 4.5V for this MOSFET?

    The gate charge (Qg) at 4.5V is 1.1nC.

  9. What is the on-resistance (Rds On) at 200mA and 4.5V for the NTNS3A65PZT5G?

    The on-resistance (Rds On) at 200mA and 4.5V is 1.3 Ohm.

  10. In what package is the NTNS3A65PZT5G available?

    The NTNS3A65PZT5G is available in the SOT-883 (XDFN3) package.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:281mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:44 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):155mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883 (XDFN3) (1x0.6)
Package / Case:3-XFDFN
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Similar Products

Part Number NTNS3A65PZT5G NTNS3A67PZT5G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 281mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V -
Rds On (Max) @ Id, Vgs 1.3Ohm @ 200mA, 4.5V -
Vgs(th) (Max) @ Id 1V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 1.1 nC @ 4.5 V -
Vgs (Max) ±8V -
Input Capacitance (Ciss) (Max) @ Vds 44 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 155mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 (XDFN3) (1x0.6) SOT-883 (XDFN3) (1x0.6)
Package / Case 3-XFDFN 3-XFDFN

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