MURF860G
  • Share:

onsemi MURF860G

Manufacturer No:
MURF860G
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURF860G is a high-performance, ultrafast rectifier diode produced by ON Semiconductor. This device is part of the MUR/SUR8 series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MURF860G is known for its fast recovery time and high reliability, making it suitable for demanding applications.

Key Specifications

CharacteristicSymbolUnitValue
Peak Repetitive Reverse VoltageVRRMV600
Average Rectified Forward CurrentIF(AV)A8.0
Peak Repetitive Forward CurrentIFMA16
Nonrepetitive Peak Surge CurrentIFSMA100
Operating Junction TemperatureTJ°C-65 to +175
Maximum Instantaneous Forward VoltagevFV1.50 (at IF = 8.0 A, TC = 150°C)
Maximum Reverse Recovery Timetrrns50 (at IF = 1.0 A, di/dt = 50 A/μs)
Thermal Resistance, Junction-to-CaseRθJC°C/W4.75
Thermal Resistance, Junction-to-AmbientRθJA°C/W75

Key Features

  • Ultrafast 25 and 50 nanosecond recovery time
  • Operating junction temperature up to 175°C
  • Low forward voltage and low leakage current
  • Reverse voltage up to 600 V
  • ESD ratings: Machine Model > 400 V, Human Body Model > 16,000 V
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free and RoHS compliant
  • Corrosion-resistant finish and readily solderable terminal leads

Applications

The MURF860G is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Automotive systems requiring AEC-Q101 qualification
  • Other critical applications where fast recovery and high reliability are essential

Q & A

  1. What is the peak repetitive reverse voltage of the MURF860G?
    The peak repetitive reverse voltage (VRRM) of the MURF860G is 600 V.
  2. What is the average rectified forward current rating of the MURF860G?
    The average rectified forward current (IF(AV)) is 8.0 A.
  3. What is the maximum operating junction temperature of the MURF860G?
    The operating junction temperature range is -65°C to +175°C.
  4. What is the maximum instantaneous forward voltage of the MURF860G?
    The maximum instantaneous forward voltage (vF) is 1.50 V at IF = 8.0 A and TC = 150°C.
  5. Is the MURF860G suitable for automotive applications?
    Yes, the MURF860G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  6. Is the MURF860G Pb-free and RoHS compliant?
    Yes, the MURF860G is Pb-free and RoHS compliant.
  7. What is the thermal resistance, junction-to-case (RθJC) of the MURF860G?
    The thermal resistance, junction-to-case (RθJC) is 4.75 °C/W.
  8. What is the thermal resistance, junction-to-ambient (RθJA) of the MURF860G?
    The thermal resistance, junction-to-ambient (RθJA) is 75 °C/W.
  9. What are the ESD ratings of the MURF860G?
    The ESD ratings are Machine Model > 400 V and Human Body Model > 16,000 V.
  10. What is the recovery time of the MURF860G?
    The maximum reverse recovery time (trr) is 50 ns at IF = 1.0 A and di/dt = 50 A/μs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220FP
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.33
76

Please send RFQ , we will respond immediately.

Same Series
MUR815
MUR815
DIODE GEN PURP 150V 8A TO220AC
MUR810
MUR810
RECTIFIER DIODE
MUR840
MUR840
DIODE SWITCHING 400V 8A
MUR805G
MUR805G
DIODE GEN PURP 50V 8A TO220AC
MUR820G
MUR820G
DIODE GEN PURP 200V 8A TO220AC
MUR860G
MUR860G
DIODE GEN PURP 600V 8A TO220AC
MUR815G
MUR815G
DIODE GEN PURP 150V 8A TO220AC
MUR840G
MUR840G
DIODE GEN PURP 400V 8A TO220AC
MUR810G
MUR810G
DIODE GEN PURP 100V 8A TO220-2

Similar Products

Part Number MURF860G MUR860G MURF860
Manufacturer onsemi onsemi SMC Diode Solutions
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.5 V @ 8 A 2.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220-2 ITO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
MUR860J
MUR860J
WeEn Semiconductors
ULTRAFAST POWER DIODE
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
BAT54-FS
BAT54-FS
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 0.2A, 30V,
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
STTH20R04G
STTH20R04G
STMicroelectronics
DIODE GEN PURP 400V 20A D2PAK
MURS120HE3/52T
MURS120HE3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 2A DO214AA
PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F

Related Product By Brand

BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5