MURF860G
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onsemi MURF860G

Manufacturer No:
MURF860G
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 600V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MURF860G is a high-performance, ultrafast rectifier diode produced by ON Semiconductor. This device is part of the MUR/SUR8 series, designed for use in switching power supplies, inverters, and as free-wheeling diodes. The MURF860G is known for its fast recovery time and high reliability, making it suitable for demanding applications.

Key Specifications

CharacteristicSymbolUnitValue
Peak Repetitive Reverse VoltageVRRMV600
Average Rectified Forward CurrentIF(AV)A8.0
Peak Repetitive Forward CurrentIFMA16
Nonrepetitive Peak Surge CurrentIFSMA100
Operating Junction TemperatureTJ°C-65 to +175
Maximum Instantaneous Forward VoltagevFV1.50 (at IF = 8.0 A, TC = 150°C)
Maximum Reverse Recovery Timetrrns50 (at IF = 1.0 A, di/dt = 50 A/μs)
Thermal Resistance, Junction-to-CaseRθJC°C/W4.75
Thermal Resistance, Junction-to-AmbientRθJA°C/W75

Key Features

  • Ultrafast 25 and 50 nanosecond recovery time
  • Operating junction temperature up to 175°C
  • Low forward voltage and low leakage current
  • Reverse voltage up to 600 V
  • ESD ratings: Machine Model > 400 V, Human Body Model > 16,000 V
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free and RoHS compliant
  • Corrosion-resistant finish and readily solderable terminal leads

Applications

The MURF860G is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Automotive systems requiring AEC-Q101 qualification
  • Other critical applications where fast recovery and high reliability are essential

Q & A

  1. What is the peak repetitive reverse voltage of the MURF860G?
    The peak repetitive reverse voltage (VRRM) of the MURF860G is 600 V.
  2. What is the average rectified forward current rating of the MURF860G?
    The average rectified forward current (IF(AV)) is 8.0 A.
  3. What is the maximum operating junction temperature of the MURF860G?
    The operating junction temperature range is -65°C to +175°C.
  4. What is the maximum instantaneous forward voltage of the MURF860G?
    The maximum instantaneous forward voltage (vF) is 1.50 V at IF = 8.0 A and TC = 150°C.
  5. Is the MURF860G suitable for automotive applications?
    Yes, the MURF860G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  6. Is the MURF860G Pb-free and RoHS compliant?
    Yes, the MURF860G is Pb-free and RoHS compliant.
  7. What is the thermal resistance, junction-to-case (RθJC) of the MURF860G?
    The thermal resistance, junction-to-case (RθJC) is 4.75 °C/W.
  8. What is the thermal resistance, junction-to-ambient (RθJA) of the MURF860G?
    The thermal resistance, junction-to-ambient (RθJA) is 75 °C/W.
  9. What are the ESD ratings of the MURF860G?
    The ESD ratings are Machine Model > 400 V and Human Body Model > 16,000 V.
  10. What is the recovery time of the MURF860G?
    The maximum reverse recovery time (trr) is 50 ns at IF = 1.0 A and di/dt = 50 A/μs.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Full Pack
Supplier Device Package:TO-220FP
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MURF860G MUR860G MURF860
Manufacturer onsemi onsemi SMC Diode Solutions
Product Status Active Active Obsolete
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.5 V @ 8 A 2.2 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 50 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 Full Pack TO-220-2 TO-220-2 Full Pack, Isolated Tab
Supplier Device Package TO-220FP TO-220-2 ITO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 150°C

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