Overview
The MBRS140T3G is a Schottky Barrier Rectifier produced by ON Semiconductor. It employs the Schottky Barrier principle in a large area metal-to-silicon power diode, featuring state-of-the-art geometry with epitaxial construction, oxide passivation, and metal overlay contact. This diode is ideally suited for low voltage, high frequency rectification, as well as for use as free-wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VRRM (Peak Repetitive Reverse Voltage) | 40 | V |
| VF (Forward Voltage Drop) | 0.55 (Max @ 1.0 A, TJ = 25°C) | V |
| IF(AV) (Average Rectified Forward Current) | 1.0 | A |
| IFSM (Non-Repetitive Peak Surge Current) | 40 | A |
| TJ (Operating Junction Temperature) | −65 to +125 | °C |
| Package Type | SMB (DO-214AA) | |
| Weight | Approximately 95 mg |
Key Features
- Schottky Barrier Technology: Fast switching capabilities and low forward voltage drop, ideal for efficient power conversion and minimal power loss.
- Low Forward Voltage Drop: As low as 0.48 volts at 1 ampere forward current, making it suitable for high-efficiency applications.
- Fast Switching Speed: Rapid switching and recovery times, beneficial for switch-mode power supplies and other high-frequency applications.
- High Current Capability: Can handle relatively high forward currents, making it suitable for applications requiring substantial power dissipation.
- Surface-Mount Package: Compact SMB (DO-214AA) package with J-bend leads, enhancing versatility and ease of integration into modern electronic designs.
- Robust Construction: Designed to resist mechanical stress and environmental factors, ensuring durability and reliability.
- Wide Operating Temperature Range: Suitable for a wide range of temperatures, from −65 to +125°C.
- Low Leakage Current: Minimizes power dissipation and ensures efficiency even in standby or off-state conditions.
- Reverse Voltage Protection: Protects sensitive electronic components from damage caused by reverse voltage or transient surges.
Applications
- Switch-Mode Power Supplies (SMPS): Used as rectifier diodes to achieve optimum power efficiency through low forward voltage drop and fast switching speed.
- Voltage Clamping: Limits voltage across sensitive components and protects against overvoltage by providing a low impedance path.
- Freewheeling Diode in Inductive Load Circuits: Protects switches and other components from voltage spikes by providing a path for inductive current to circulate.
- Power Factor Correction (PFC): Improves PFC circuits by rectifying AC input voltage with low forward voltage drop and fast recovery abilities.
- Reverse Polarity Protection: Blocks reverse current flow to protect sensitive components from damage caused by reversed input polarity.
Q & A
- What is the peak repetitive reverse voltage of the MBRS140T3G diode?
The peak repetitive reverse voltage (VRRM) is 40 volts.
- What is the forward voltage drop of the MBRS140T3G diode at 1 ampere forward current?
The forward voltage drop (VF) is as low as 0.48 volts at 1 ampere forward current.
- What is the average rectified forward current rating of the MBRS140T3G diode?
The average rectified forward current (IF(AV)) is 1.0 ampere.
- What is the non-repetitive peak surge current rating of the MBRS140T3G diode?
The non-repetitive peak surge current (IFSM) is 40 amperes.
- What is the operating junction temperature range of the MBRS140T3G diode?
The operating junction temperature (TJ) range is from −65 to +125°C.
- What type of package does the MBRS140T3G diode use?
The MBRS140T3G diode uses an SMB (DO-214AA) surface-mount package with J-bend leads.
- What are the key applications of the MBRS140T3G diode?
Key applications include switch-mode power supplies, voltage clamping, freewheeling diodes in inductive load circuits, power factor correction, and reverse polarity protection.
- Why is the MBRS140T3G diode suitable for high-frequency applications?
The diode is suitable due to its fast switching speed and low forward voltage drop, which are critical for efficient power conversion in high-frequency applications.
- Is the MBRS140T3G diode AEC-Q101 qualified?
Yes, the MBRS140T3G diode is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the weight of the MBRS140T3G diode?
The weight of the MBRS140T3G diode is approximately 95 mg.
