FDWS9508L_F085
  • Share:

onsemi FDWS9508L_F085

Manufacturer No:
FDWS9508L_F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS9508L-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The FDWS9508L-F085 features a typical on-state resistance (RDS(on)) of 3.6 mΩ at VGS = -10 V and ID = -80 A, making it suitable for various power management and automotive systems.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDS) -40 V
Gate-to-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) -80 A
Pulsed Drain Current See Figure 4 A
On-State Resistance (RDS(on)) 3.6 mΩ at VGS = -10 V, ID = -80 A
Total Gate Charge (Qg) 82 nC at VGS = -10 V, ID = -80 A nC
Maximum Junction Temperature (TJ) 175 °C
Thermal Resistance, Junction to Case (RθJC) 0.7 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 50 °C/W
Power Dissipation (PD) 214 W W
Package POWER56 (DFNW8)

Key Features

  • Typical RDS(on) = 3.6 mΩ at VGS = -10 V, ID = -80 A
  • Typical Qg(tot) = 82 nC at VGS = -10 V, ID = -80 A
  • UIS (Unclamped Inductive Switching) Capability
  • Wettable flanks for automatic optical inspection (AOI)
  • AEC-Q101 Qualified
  • Pb-free and RoHS compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDWS9508L-F085?

    The maximum drain-to-source voltage (VDS) is -40 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDWS9508L-F085?

    The typical RDS(on) is 3.6 mΩ at VGS = -10 V and ID = -80 A.

  3. What is the maximum continuous drain current (ID) of the FDWS9508L-F085?

    The maximum continuous drain current (ID) is -80 A.

  4. Is the FDWS9508L-F085 AEC-Q101 qualified?
  5. What is the package type of the FDWS9508L-F085?

    The package type is POWER56 (DFNW8).

  6. What is the maximum junction temperature (TJ) of the FDWS9508L-F085?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the FDWS9508L-F085 Pb-free and RoHS compliant?
  8. What are some typical applications of the FDWS9508L-F085?

    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, integrated starter/alternator, distributed power architectures and VRM, and primary switch for 12 V systems.

  9. What is the thermal resistance, junction to case (RθJC), of the FDWS9508L-F085?

    The thermal resistance, junction to case (RθJC), is 0.7 °C/W.

  10. What is the total gate charge (Qg) of the FDWS9508L-F085?

    The total gate charge (Qg) is 82 nC at VGS = -10 V and ID = -80 A.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:4840 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):214W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

-
288

Please send RFQ , we will respond immediately.

Same Series
FDWS9508L-F085
FDWS9508L-F085
MOSFET P-CH 40V 80A 8PQFN

Similar Products

Part Number FDWS9508L_F085 FDWS9508L-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V 4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 4840 pF @ 20 V 4840 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 214W (Tj) 214W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE