FDWS9508L_F085
  • Share:

onsemi FDWS9508L_F085

Manufacturer No:
FDWS9508L_F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS9508L-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The FDWS9508L-F085 features a typical on-state resistance (RDS(on)) of 3.6 mΩ at VGS = -10 V and ID = -80 A, making it suitable for various power management and automotive systems.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDS) -40 V
Gate-to-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) -80 A
Pulsed Drain Current See Figure 4 A
On-State Resistance (RDS(on)) 3.6 mΩ at VGS = -10 V, ID = -80 A
Total Gate Charge (Qg) 82 nC at VGS = -10 V, ID = -80 A nC
Maximum Junction Temperature (TJ) 175 °C
Thermal Resistance, Junction to Case (RθJC) 0.7 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 50 °C/W
Power Dissipation (PD) 214 W W
Package POWER56 (DFNW8)

Key Features

  • Typical RDS(on) = 3.6 mΩ at VGS = -10 V, ID = -80 A
  • Typical Qg(tot) = 82 nC at VGS = -10 V, ID = -80 A
  • UIS (Unclamped Inductive Switching) Capability
  • Wettable flanks for automatic optical inspection (AOI)
  • AEC-Q101 Qualified
  • Pb-free and RoHS compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDWS9508L-F085?

    The maximum drain-to-source voltage (VDS) is -40 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDWS9508L-F085?

    The typical RDS(on) is 3.6 mΩ at VGS = -10 V and ID = -80 A.

  3. What is the maximum continuous drain current (ID) of the FDWS9508L-F085?

    The maximum continuous drain current (ID) is -80 A.

  4. Is the FDWS9508L-F085 AEC-Q101 qualified?
  5. What is the package type of the FDWS9508L-F085?

    The package type is POWER56 (DFNW8).

  6. What is the maximum junction temperature (TJ) of the FDWS9508L-F085?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the FDWS9508L-F085 Pb-free and RoHS compliant?
  8. What are some typical applications of the FDWS9508L-F085?

    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, integrated starter/alternator, distributed power architectures and VRM, and primary switch for 12 V systems.

  9. What is the thermal resistance, junction to case (RθJC), of the FDWS9508L-F085?

    The thermal resistance, junction to case (RθJC), is 0.7 °C/W.

  10. What is the total gate charge (Qg) of the FDWS9508L-F085?

    The total gate charge (Qg) is 82 nC at VGS = -10 V and ID = -80 A.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:4840 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):214W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

-
288

Please send RFQ , we will respond immediately.

Same Series
FDWS9508L-F085
FDWS9508L-F085
MOSFET P-CH 40V 80A 8PQFN

Similar Products

Part Number FDWS9508L_F085 FDWS9508L-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V 4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 4840 pF @ 20 V 4840 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 214W (Tj) 214W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74AC139DR2G
MC74AC139DR2G
onsemi
IC DECODER/DEMUX 1X2:4 16SOIC
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN