FDWS9508L_F085
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onsemi FDWS9508L_F085

Manufacturer No:
FDWS9508L_F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 80A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDWS9508L-F085 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-state resistance and high current handling. The FDWS9508L-F085 features a typical on-state resistance (RDS(on)) of 3.6 mΩ at VGS = -10 V and ID = -80 A, making it suitable for various power management and automotive systems.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDS) -40 V
Gate-to-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) -80 A
Pulsed Drain Current See Figure 4 A
On-State Resistance (RDS(on)) 3.6 mΩ at VGS = -10 V, ID = -80 A mΩ
Total Gate Charge (Qg) 82 nC at VGS = -10 V, ID = -80 A nC
Maximum Junction Temperature (TJ) 175 °C
Thermal Resistance, Junction to Case (RθJC) 0.7 °C/W
Thermal Resistance, Junction to Ambient (RθJA) 50 °C/W
Power Dissipation (PD) 214 W W
Package POWER56 (DFNW8)

Key Features

  • Typical RDS(on) = 3.6 mΩ at VGS = -10 V, ID = -80 A
  • Typical Qg(tot) = 82 nC at VGS = -10 V, ID = -80 A
  • UIS (Unclamped Inductive Switching) Capability
  • Wettable flanks for automatic optical inspection (AOI)
  • AEC-Q101 Qualified
  • Pb-free and RoHS compliant

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDWS9508L-F085?

    The maximum drain-to-source voltage (VDS) is -40 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDWS9508L-F085?

    The typical RDS(on) is 3.6 mΩ at VGS = -10 V and ID = -80 A.

  3. What is the maximum continuous drain current (ID) of the FDWS9508L-F085?

    The maximum continuous drain current (ID) is -80 A.

  4. Is the FDWS9508L-F085 AEC-Q101 qualified?
  5. What is the package type of the FDWS9508L-F085?

    The package type is POWER56 (DFNW8).

  6. What is the maximum junction temperature (TJ) of the FDWS9508L-F085?

    The maximum junction temperature (TJ) is 175°C.

  7. Is the FDWS9508L-F085 Pb-free and RoHS compliant?
  8. What are some typical applications of the FDWS9508L-F085?

    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, integrated starter/alternator, distributed power architectures and VRM, and primary switch for 12 V systems.

  9. What is the thermal resistance, junction to case (RθJC), of the FDWS9508L-F085?

    The thermal resistance, junction to case (RθJC), is 0.7 °C/W.

  10. What is the total gate charge (Qg) of the FDWS9508L-F085?

    The total gate charge (Qg) is 82 nC at VGS = -10 V and ID = -80 A.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:4840 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):214W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Same Series
FDWS9508L-F085
FDWS9508L-F085
MOSFET P-CH 40V 80A 8PQFN

Similar Products

Part Number FDWS9508L_F085 FDWS9508L-F085
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V 4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 4840 pF @ 20 V 4840 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 214W (Tj) 214W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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