Overview
The 2N7002KW is an N-channel enhancement mode field effect transistor (MOSFET) produced by onsemi. This device is designed for high-speed pulse amplifier and drive applications, particularly in battery-operated systems and solid-state relays. It features advanced trench process technology and a high-density cell design, which contribute to its ultra-low on-resistance and fast switching speed. The 2N7002KW is packaged in a small SOT-323 (SC-70) surface mount package, making it suitable for space-constrained designs. It is also Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current | ID | 115 | mA |
| Pulsed Drain Current | IDM | 800 | mA |
| On-Resistance (VGS@10V, ID@500mA) | RDS(ON) | 3 | Ω |
| On-Resistance (VGS@4.5V, ID@200mA) | RDS(ON) | 4 | Ω |
| Gate Threshold Voltage | VGS(th) | 1.1 | V |
| Operating Junction Temperature Range | TJ | -55 to +150 | °C |
| Storage Temperature Range | TSTG | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient | RθJA | 625 | °C/W |
Key Features
- Low On-Resistance: RDS(ON) of 3Ω at VGS@10V, ID@500mA and 4Ω at VGS@4.5V, ID@200mA.
- Low Gate Threshold Voltage: VGS(th) of 1.1V.
- Low Input Capacitance: Ensures fast switching speeds and low input leakage.
- Fast Switching Speed: Suitable for high-speed pulse amplifier and drive applications.
- Low Input/Output Leakage: Minimizes power consumption in off-state conditions.
- Ultra-Small Surface Mount Package: SOT-323 (SC-70) package for space-efficient designs.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with EU RoHS directives.
- ESD Protected: HBM = 1000V and CDM = 1500V protection.
Applications
- Battery Operated Systems: Ideal for portable devices due to low power consumption and high efficiency.
- Solid-State Relays: Used in relay drivers for relays, displays, lamps, and solenoids.
- Load Switches: Suitable for voltage-controlled small signal switching in various applications.
- DC/DC Converters: High-density cell design makes it suitable for low RDS(ON) requirements.
Q & A
- What is the maximum drain-source voltage for the 2N7002KW MOSFET?
The maximum drain-source voltage (VDSS) is 60V.
- What is the gate-source threshold voltage for this MOSFET?
The gate-source threshold voltage (VGS(th)) is approximately 1.1V.
- What is the continuous drain current rating for the 2N7002KW?
The continuous drain current (ID) is 115mA.
- What is the on-resistance of the 2N7002KW at VGS@10V and ID@500mA?
The on-resistance (RDS(ON)) is 3Ω at VGS@10V and ID@500mA.
- Is the 2N7002KW MOSFET Pb-free and RoHS compliant?
Yes, the 2N7002KW is Pb-free and RoHS compliant.
- What is the thermal resistance, junction to ambient, for the 2N7002KW?
The thermal resistance, junction to ambient (RθJA), is 625°C/W.
- What are the typical applications of the 2N7002KW MOSFET?
Typical applications include battery-operated systems, solid-state relays, load switches, and DC/DC converters.
- Does the 2N7002KW have ESD protection?
Yes, the 2N7002KW has ESD protection with HBM = 1000V and CDM = 1500V.
- What package type is the 2N7002KW available in?
The 2N7002KW is available in the SOT-323 (SC-70) surface mount package.
- What is the operating junction temperature range for the 2N7002KW?
The operating junction temperature range is -55°C to +150°C.
