BSC040N10NS5ATMA1
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Infineon Technologies BSC040N10NS5ATMA1

Manufacturer No:
BSC040N10NS5ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 100A TDSON
Delivery:
Payment:
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Product Introduction

Overview

The BSC040N10NS5ATMA1 is a high-performance N-channel power MOSFET from Infineon Technologies, part of their OptiMOS™ 5 series. This device is designed for synchronous rectification in various applications, including telecom and server power supplies, solar systems, low voltage drives, and laptop adapters. It is packaged in a SuperSO8 5x6 package, offering superior thermal resistance and high power density.

Key Specifications

Parameter Value
Voltage Rating (V_DS) 100 V
Current Rating (I_D) 100 A
On-Resistance (R_DS(on)) 0.0034 ohm
Package Type TDSON (8-pin)
Mounting Type Surface Mount
Avalanche Testing 100% avalanche tested

Key Features

The BSC040N10NS5ATMA1 features several key improvements over previous generations:

  • Optimized for synchronous rectification and high switching frequencies.
  • Output capacitance reduction of up to 44%.
  • R_DS(on) reduction of up to 43% from previous generations.
  • Highest system efficiency due to reduced switching and conduction losses.
  • Less paralleling required, increasing power density.
  • Low voltage overshoot.

Applications

The BSC040N10NS5ATMA1 is suitable for a variety of applications, including:

  • Synchronous rectification in telecom and server power supplies.
  • Solar systems.
  • Low voltage drives.
  • Laptop adapters.

Q & A

  1. What is the voltage rating of the BSC040N10NS5ATMA1?

    The voltage rating is 100 V.

  2. What is the current rating of the BSC040N10NS5ATMA1?

    The current rating is 100 A.

  3. What is the on-resistance (R_DS(on)) of the BSC040N10NS5ATMA1?

    The on-resistance is 0.0034 ohm.

  4. In what package is the BSC040N10NS5ATMA1 available?

    The device is available in an 8-pin TDSON package.

  5. Is the BSC040N10NS5ATMA1 suitable for high switching frequencies?

    Yes, it is optimized for high switching frequencies.

  6. What are the benefits of reduced R_DS(on) in the BSC040N10NS5ATMA1?

    The benefits include reduced switching and conduction losses, and increased power density.

  7. Has the BSC040N10NS5ATMA1 been avalanche tested?

    Yes, it has been 100% avalanche tested.

  8. What are some of the key applications for the BSC040N10NS5ATMA1?

    Key applications include synchronous rectification in telecom and server power supplies, solar systems, low voltage drives, and laptop adapters.

  9. How does the BSC040N10NS5ATMA1 improve system efficiency?

    It improves system efficiency by reducing switching and conduction losses.

  10. What is the mounting type of the BSC040N10NS5ATMA1?

    The mounting type is surface mount.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 139W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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$3.28
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Similar Products

Part Number BSC040N10NS5ATMA1 BSC070N10NS5ATMA1 BSC050N10NS5ATMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 80A (Tc) 16A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V 7mOhm @ 40A, 10V 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 95µA 3.8V @ 50µA 3.8V @ 72µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 38 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 50 V 2700 pF @ 50 V 4300 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 139W (Tc) 2.5W (Ta), 83W (Tc) 3W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8-7 PG-TDSON-8-7 PG-TDSON-8-7
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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