STS12NH3LL
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STMicroelectronics STS12NH3LL

Manufacturer No:
STS12NH3LL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 12A 8SO
Delivery:
Payment:
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iso9001
iso13485

Product Introduction

Overview

The STS12NH3LL is a high-performance N-channel MOSFET produced by STMicroelectronics. This component is part of the STripFET™ series, known for its ultra-low gate charge and high current handling capabilities. Although the STS12NH3LL is currently obsolete and no longer manufactured, it remains relevant for understanding and replacing similar components in existing designs.

Key Specifications

Parameter Value Unit
Continuous Drain Current (Id) 6 A
Maximum Drain Current (Id Max) 12 A
Drain-Source Voltage (Vds) 30 V
Mounting Type SMD
Number of Pins 8
Package Type SO-8

Key Features

  • Ultra-low gate charge: Enhances switching performance and reduces power losses.
  • High current handling: Capable of handling up to 12 A of maximum drain current.
  • Low on-state resistance (Rds(on)): Minimizes power dissipation and improves efficiency.
  • Compact SO-8 package: Suitable for space-constrained applications.

Applications

The STS12NH3LL is suitable for various power management and switching applications, including:

  • Power supplies and DC-DC converters: Due to its high current handling and low on-state resistance.
  • Motor control and drive systems: For efficient and reliable motor operation.
  • High-frequency switching circuits: Benefiting from its ultra-low gate charge.
  • Notebook and mobile device power systems: As seen in the PM6680 evaluation kit, which utilizes this MOSFET for efficient power management.

Q & A

  1. What is the maximum drain current of the STS12NH3LL?

    The maximum drain current (Id Max) is 12 A.

  2. What is the drain-source voltage rating of the STS12NH3LL?

    The drain-source voltage (Vds) is rated at 30 V.

  3. What package type does the STS12NH3LL come in?

    The STS12NH3LL comes in an SO-8 package.

  4. Is the STS12NH3LL still in production?

    No, the STS12NH3LL is obsolete and no longer manufactured.

  5. What are some key features of the STS12NH3LL?

    Key features include ultra-low gate charge, high current handling, low on-state resistance, and a compact SO-8 package).

  6. What types of applications is the STS12NH3LL suitable for?

    It is suitable for power supplies, DC-DC converters, motor control, high-frequency switching circuits, and notebook power systems).

  7. How does the ultra-low gate charge benefit the STS12NH3LL?

    The ultra-low gate charge enhances switching performance and reduces power losses, making it more efficient in high-frequency applications).

  8. What is the continuous drain current rating of the STS12NH3LL?

    The continuous drain current (Id) is rated at 6 A).

  9. Can the STS12NH3LL be used in high-power applications?

    Yes, it can be used in high-power applications due to its high current handling and low on-state resistance).

  10. Where can I find detailed specifications for the STS12NH3LL?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' website or through distributors like Digi-Key and AllDataSheet).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:965 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS12NH3LL STS17NH3LL
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 6A, 10V 5.7mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 24 nC @ 4.5 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 965 pF @ 25 V 1810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.7W (Tc) 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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