BUK9M85-60EX
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Nexperia USA Inc. BUK9M85-60EX

Manufacturer No:
BUK9M85-60EX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12.8A LFPAK33
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BUK9M85-60EX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is designed for use in demanding automotive and industrial applications, where high reliability and thermal stability are crucial. The MOSFET features an enhancement mode channel and is housed in the SOT-1210, 8-LFPAK33 package, which provides excellent thermal management and mechanical support.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)60V
Continuous Drain Current (Id) @ 25°C12.8A
Power Dissipation (Max)31W
Operating Temperature Range-55°C to +175°C
PackageSOT-1210, 8-LFPAK33
Transistor Element MaterialSilicon
Avalanche Energy Rating (Eas)4.55 mJ
RoHS StatusROHS3 Compliant

Key Features

  • High Continuous Drain Current: The BUK9M85-60EX can handle a continuous drain current of 12.8A at 25°C, making it suitable for high-power applications.
  • High Operating Temperature Range: The device operates within a temperature range of -55°C to +175°C, ensuring reliability in thermally demanding environments.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power losses and enhances overall system efficiency.
  • Avalanche Energy Rating: The MOSFET has an avalanche energy rating of 4.55 mJ, indicating its capability to withstand transient events without damage.
  • RoHS Compliance: The BUK9M85-60EX is ROHS3 compliant, ensuring it meets environmental standards for hazardous substance restrictions.

Applications

The BUK9M85-60EX is designed for use in various demanding applications, including:

  • Automotive Systems: Suitable for automotive power systems, motor control, and other high-reliability applications.
  • Industrial Power Systems: Used in industrial power supplies, motor drives, and other high-power applications requiring robust thermal performance.
  • Power Management: Ideal for power management in systems that require high efficiency and reliability.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BUK9M85-60EX?
    The maximum drain to source voltage (Vdss) is 60V.
  2. What is the continuous drain current (Id) at 25°C for the BUK9M85-60EX?
    The continuous drain current (Id) at 25°C is 12.8A.
  3. What is the maximum power dissipation of the BUK9M85-60EX?
    The maximum power dissipation is 31W.
  4. What is the operating temperature range of the BUK9M85-60EX?
    The operating temperature range is -55°C to +175°C.
  5. What package type is used for the BUK9M85-60EX?
    The package type is SOT-1210, 8-LFPAK33.
  6. Is the BUK9M85-60EX RoHS compliant?
    Yes, the BUK9M85-60EX is ROHS3 compliant.
  7. What is the avalanche energy rating (Eas) of the BUK9M85-60EX?
    The avalanche energy rating (Eas) is 4.55 mJ.
  8. What material is used for the transistor element in the BUK9M85-60EX?
    The transistor element material is Silicon.
  9. In which applications is the BUK9M85-60EX typically used?
    The BUK9M85-60EX is typically used in automotive systems, industrial power systems, and power management applications.
  10. Why is the BUK9M85-60EX suitable for thermally demanding environments?
    The BUK9M85-60EX is suitable for thermally demanding environments due to its high operating temperature range and efficient thermal management provided by the SOT-1210, 8-LFPAK33 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:73mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:434 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M85-60EX BUK9M15-60EX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12.8A (Tc) 47A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V, 10V
Rds On (Max) @ Id, Vgs 73mOhm @ 5A, 10V 13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.45V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 5 V 17 nC @ 5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 434 pF @ 25 V 2230 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 31W (Tc) 75W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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