FDMT80040DC
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onsemi FDMT80040DC

Manufacturer No:
FDMT80040DC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 420A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMT80040DC is a high-performance N-Channel MOSFET produced by onsemi, utilizing advanced PowerTrench® and Dual CoolTM package technologies. This MOSFET is designed to offer superior thermal management and electrical performance, making it suitable for a wide range of power management applications. The device is part of onsemi's low to medium voltage MOSFET portfolio, optimized for high current handling and low on-resistance.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
Continuous Drain Current (Id)420 A
On-Resistance (Rds(on))440 µΩ
Package TypePQFN (Surface Mount)
Maximum Junction Temperature150°C
Power Dissipation156 W
RoHS ComplianceYes

Key Features

  • Advanced PowerTrench® process for improved performance and reliability.
  • Dual CoolTM package technology for enhanced thermal management.
  • Low on-resistance (Rds(on)) of 440 µΩ for reduced power losses.
  • High continuous drain current (Id) of 420 A, suitable for high-power applications.
  • Surface mount PQFN package for easy integration into various designs.

Applications

The FDMT80040DC is versatile and can be used in a variety of power management and high-current applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems requiring high reliability and performance.
  • Industrial power management and control systems.

Q & A

  1. What is the voltage rating of the FDMT80040DC MOSFET?
    The voltage rating (Vds) of the FDMT80040DC MOSFET is 40 V.
  2. What is the continuous drain current (Id) of the FDMT80040DC?
    The continuous drain current (Id) of the FDMT80040DC is 420 A.
  3. What is the on-resistance (Rds(on)) of the FDMT80040DC?
    The on-resistance (Rds(on)) of the FDMT80040DC is 440 µΩ.
  4. What package type is used for the FDMT80040DC?
    The FDMT80040DC uses a PQFN (Surface Mount) package.
  5. Is the FDMT80040DC RoHS compliant?
    Yes, the FDMT80040DC is RoHS compliant.
  6. What is the maximum junction temperature for the FDMT80040DC?
    The maximum junction temperature for the FDMT80040DC is 150°C.
  7. What are some common applications for the FDMT80040DC?
    The FDMT80040DC can be used in power supplies, motor control systems, automotive systems, and industrial power management systems.
  8. What technology is used in the FDMT80040DC for thermal management?
    The FDMT80040DC uses Dual CoolTM package technology for enhanced thermal management.
  9. What is the power dissipation capability of the FDMT80040DC?
    The power dissipation capability of the FDMT80040DC is 156 W.
  10. Where can I find detailed specifications for the FDMT80040DC?
    Detailed specifications for the FDMT80040DC can be found on the onsemi official website, as well as on distributor websites such as Digi-Key and Newark.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:420A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:0.56mOhm @ 64A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:338 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26110 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-Dual Cool™88
Package / Case:8-PowerVDFN
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Similar Products

Part Number FDMT80040DC FDMT80080DC FDMT80060DC
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 420A (Tc) 36A (Ta), 254A (Tc) 43A (Ta), 292A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 8V, 10V 8V, 10V
Rds On (Max) @ Id, Vgs 0.56mOhm @ 64A, 10V 1.35mOhm @ 36A, 10V 1.1mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 338 nC @ 10 V 273 nC @ 10 V 238 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 26110 pF @ 20 V 20720 pF @ 40 V 20170 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 156W (Tc) 3.2W (Ta), 156W (Tc) 3.2W (Ta), 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-Dual Cool™88 8-Dual Cool™88 8-Dual Cool™88
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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