FDS4465
  • Share:

onsemi FDS4465

Manufacturer No:
FDS4465
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 13.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4465 is a P-Channel MOSFET from onsemi, utilizing the advanced PowerTrench® process. This device is optimized for power management applications and features a rugged gate design. It is specified to operate with a wide range of gate drive voltages from 1.8 V to 8 V, making it versatile for various power management needs.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-20V
Gate-Source Voltage (VGSS)±8V
Drain Current (ID) Continuous-13.5A
Drain Current (ID) Pulsed-50A
Power Dissipation (PD)2.5 (Note 1a), 1.5 (Note 1b), 1.2 (Note 1c)W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +175 °C°C
Thermal Resistance, Junction-to-Ambient (RθJA)50 (Note 1a), 125 (Note 1c)°C/W
Thermal Resistance, Junction-to-Case (RθJC)25°C/W
On-State Resistance (RDS(on)) @ VGS = -4.5 V8.5 mΩ
On-State Resistance (RDS(on)) @ VGS = -2.5 V10.5 mΩ
On-State Resistance (RDS(on)) @ VGS = -1.8 V14 mΩ

Key Features

  • Fast switching speed
  • High performance trench technology for extremely low RDS(on)
  • High current and power handling capability
  • Rugged gate design
  • Wide range of gate drive voltage (1.8 V–8 V)
  • Qualified to AEC Q101 and RoHS compliant

Applications

  • Power management
  • Load switch
  • Battery protection

Q & A

  1. What is the drain-source voltage rating of the FDS4465 MOSFET? The drain-source voltage rating is -20 V.
  2. What is the maximum continuous drain current of the FDS4465? The maximum continuous drain current is -13.5 A.
  3. What is the thermal resistance, junction-to-ambient, for the FDS4465? The thermal resistance, junction-to-ambient, is 50 °C/W (Note 1a) and 125 °C/W (Note 1c).
  4. What are the typical applications of the FDS4465 MOSFET? Typical applications include power management, load switch, and battery protection.
  5. Is the FDS4465 MOSFET RoHS compliant? Yes, the FDS4465 is RoHS compliant.
  6. What is the gate-source voltage range for the FDS4465? The gate-source voltage range is ±8 V.
  7. What is the on-state resistance of the FDS4465 at VGS = -4.5 V? The on-state resistance at VGS = -4.5 V is 8.5 mΩ.
  8. What is the operating and storage junction temperature range for the FDS4465? The operating and storage junction temperature range is -55 to +175 °C.
  9. Is the FDS4465 qualified to AEC Q101? Yes, the FDS4465 is qualified to AEC Q101.
  10. What is the package type of the FDS4465? The package type is SO-8 (Small Outline 8-pin).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.51
299

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDS4465 FDS4435
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 13.5A, 4.5V 20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 4.5 V 24 nC @ 5 V
Vgs (Max) ±8V ±25V
Input Capacitance (Ciss) (Max) @ Vds 8237 pF @ 10 V 1604 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ13T1G
MMSZ13T1G
onsemi
DIODE ZENER 13V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP