FDS4465
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onsemi FDS4465

Manufacturer No:
FDS4465
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 13.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDS4465 is a P-Channel MOSFET from onsemi, utilizing the advanced PowerTrench® process. This device is optimized for power management applications and features a rugged gate design. It is specified to operate with a wide range of gate drive voltages from 1.8 V to 8 V, making it versatile for various power management needs.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDSS)-20V
Gate-Source Voltage (VGSS)±8V
Drain Current (ID) Continuous-13.5A
Drain Current (ID) Pulsed-50A
Power Dissipation (PD)2.5 (Note 1a), 1.5 (Note 1b), 1.2 (Note 1c)W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to +175 °C°C
Thermal Resistance, Junction-to-Ambient (RθJA)50 (Note 1a), 125 (Note 1c)°C/W
Thermal Resistance, Junction-to-Case (RθJC)25°C/W
On-State Resistance (RDS(on)) @ VGS = -4.5 V8.5 mΩmΩ
On-State Resistance (RDS(on)) @ VGS = -2.5 V10.5 mΩmΩ
On-State Resistance (RDS(on)) @ VGS = -1.8 V14 mΩmΩ

Key Features

  • Fast switching speed
  • High performance trench technology for extremely low RDS(on)
  • High current and power handling capability
  • Rugged gate design
  • Wide range of gate drive voltage (1.8 V–8 V)
  • Qualified to AEC Q101 and RoHS compliant

Applications

  • Power management
  • Load switch
  • Battery protection

Q & A

  1. What is the drain-source voltage rating of the FDS4465 MOSFET? The drain-source voltage rating is -20 V.
  2. What is the maximum continuous drain current of the FDS4465? The maximum continuous drain current is -13.5 A.
  3. What is the thermal resistance, junction-to-ambient, for the FDS4465? The thermal resistance, junction-to-ambient, is 50 °C/W (Note 1a) and 125 °C/W (Note 1c).
  4. What are the typical applications of the FDS4465 MOSFET? Typical applications include power management, load switch, and battery protection.
  5. Is the FDS4465 MOSFET RoHS compliant? Yes, the FDS4465 is RoHS compliant.
  6. What is the gate-source voltage range for the FDS4465? The gate-source voltage range is ±8 V.
  7. What is the on-state resistance of the FDS4465 at VGS = -4.5 V? The on-state resistance at VGS = -4.5 V is 8.5 mΩ.
  8. What is the operating and storage junction temperature range for the FDS4465? The operating and storage junction temperature range is -55 to +175 °C.
  9. Is the FDS4465 qualified to AEC Q101? Yes, the FDS4465 is qualified to AEC Q101.
  10. What is the package type of the FDS4465? The package type is SO-8 (Small Outline 8-pin).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8237 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$1.51
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Similar Products

Part Number FDS4465 FDS4435
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 13.5A, 4.5V 20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 4.5 V 24 nC @ 5 V
Vgs (Max) ±8V ±25V
Input Capacitance (Ciss) (Max) @ Vds 8237 pF @ 10 V 1604 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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