IRFB3607PBF
  • Share:

Infineon Technologies IRFB3607PBF

Manufacturer No:
IRFB3607PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 75V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is housed in a TO-220 package, making it suitable for low-frequency applications that require high performance and ruggedness.

Key Specifications

Parameter Units Typical Maximum
VDSS (Drain-to-Source Breakdown Voltage) V - 75
RDS(on) (Static Drain-to-Source On-Resistance) 7.34 9.0
ID (Continuous Drain Current at TC = 25°C) A - 80
ID (Continuous Drain Current at TC = 100°C) A - 56
PD (Maximum Power Dissipation at TC = 25°C) W - 140
VGS(th) (Gate Threshold Voltage) V 2.0 4.0
TJ (Operating Junction Temperature) °C - 175
TSTG (Storage Temperature Range) °C -55 175

Key Features

  • Industry standard through-hole power package (TO-220)
  • High-current rating (up to 80A)
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100 kHz
  • Softer body-diode compared to previous silicon generation
  • Improved gate, avalanche, and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Wide portfolio available

Applications

  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters
  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits

Q & A

  1. What is the IRFB3607PBF?

    The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies.

  2. What package type does the IRFB3607PBF use?

    The IRFB3607PBF is housed in a TO-220 package.

  3. What are the typical and maximum RDS(on) values for the IRFB3607PBF?

    The typical RDS(on) is 7.34 mΩ, and the maximum is 9.0 mΩ.

  4. What is the continuous drain current rating at TC = 25°C and TC = 100°C?

    The continuous drain current is 80A at TC = 25°C and 56A at TC = 100°C.

  5. What are some of the key features of the IRFB3607PBF?

    Key features include industry standard through-hole power package, high-current rating, product qualification according to JEDEC standard, and softer body-diode compared to previous silicon generation.

  6. What are some potential applications for the IRFB3607PBF?

    Potential applications include DC motors, battery management systems, inverters, DC-DC converters, high efficiency synchronous rectification in SMPS, and uninterruptible power supply.

  7. What is the operating junction temperature range for the IRFB3607PBF?

    The operating junction temperature range is -55°C to 175°C.

  8. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation is 140W.

  9. Does the IRFB3607PBF have improved ruggedness features?

    Yes, it has improved gate, avalanche, and dynamic dv/dt ruggedness.

  10. Is the IRFB3607PBF qualified according to any industry standards?

    Yes, it is qualified according to JEDEC standard.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.42
495

Please send RFQ , we will respond immediately.

Same Series
IRFS3607TRLPBF
IRFS3607TRLPBF
MOSFET N-CH 75V 80A D2PAK
IRFSL3607PBF
IRFSL3607PBF
MOSFET N-CH 75V 80A TO262

Similar Products

Part Number IRFB3607PBF IRFB3207PBF IRFB3307PBF IRFB3507PBF IRFB3607GPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 170A (Tc) 130A (Tc) 97A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V 4.5mOhm @ 75A, 10V 6.3mOhm @ 75A, 10V 8.8mOhm @ 58A, 10V 9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 150µA 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 260 nC @ 10 V 180 nC @ 10 V 130 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3070 pF @ 50 V 7600 pF @ 50 V 5150 pF @ 50 V 3540 pF @ 50 V 3070 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 140W (Tc) 330W (Tc) 200W (Tc) 190W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAV99E6327
BAV99E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS40B5000
BAS40B5000
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC 860B E6327
BC 860B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC858BE6433HTMA1
BC858BE6433HTMA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BCX 54-16 E6327
BCX 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT89
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3