Overview
The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is housed in a TO-220 package, making it suitable for low-frequency applications that require high performance and ruggedness.
Key Specifications
Parameter | Units | Typical | Maximum |
---|---|---|---|
VDSS (Drain-to-Source Breakdown Voltage) | V | - | 75 |
RDS(on) (Static Drain-to-Source On-Resistance) | mΩ | 7.34 | 9.0 |
ID (Continuous Drain Current at TC = 25°C) | A | - | 80 |
ID (Continuous Drain Current at TC = 100°C) | A | - | 56 |
PD (Maximum Power Dissipation at TC = 25°C) | W | - | 140 |
VGS(th) (Gate Threshold Voltage) | V | 2.0 | 4.0 |
TJ (Operating Junction Temperature) | °C | - | 175 |
TSTG (Storage Temperature Range) | °C | -55 | 175 |
Key Features
- Industry standard through-hole power package (TO-220)
- High-current rating (up to 80A)
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below 100 kHz
- Softer body-diode compared to previous silicon generation
- Improved gate, avalanche, and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
- Wide portfolio available
Applications
- DC motors
- Battery management systems
- Inverters
- DC-DC converters
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
Q & A
- What is the IRFB3607PBF?
The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies.
- What package type does the IRFB3607PBF use?
The IRFB3607PBF is housed in a TO-220 package.
- What are the typical and maximum RDS(on) values for the IRFB3607PBF?
The typical RDS(on) is 7.34 mΩ, and the maximum is 9.0 mΩ.
- What is the continuous drain current rating at TC = 25°C and TC = 100°C?
The continuous drain current is 80A at TC = 25°C and 56A at TC = 100°C.
- What are some of the key features of the IRFB3607PBF?
Key features include industry standard through-hole power package, high-current rating, product qualification according to JEDEC standard, and softer body-diode compared to previous silicon generation.
- What are some potential applications for the IRFB3607PBF?
Potential applications include DC motors, battery management systems, inverters, DC-DC converters, high efficiency synchronous rectification in SMPS, and uninterruptible power supply.
- What is the operating junction temperature range for the IRFB3607PBF?
The operating junction temperature range is -55°C to 175°C.
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation is 140W.
- Does the IRFB3607PBF have improved ruggedness features?
Yes, it has improved gate, avalanche, and dynamic dv/dt ruggedness.
- Is the IRFB3607PBF qualified according to any industry standards?
Yes, it is qualified according to JEDEC standard.