IRFB3607PBF
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Infineon Technologies IRFB3607PBF

Manufacturer No:
IRFB3607PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 75V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies. This device is part of the StrongIRFET™ family, which is optimized for low RDS(on) and high current capability. It is housed in a TO-220 package, making it suitable for low-frequency applications that require high performance and ruggedness.

Key Specifications

Parameter Units Typical Maximum
VDSS (Drain-to-Source Breakdown Voltage) V - 75
RDS(on) (Static Drain-to-Source On-Resistance) 7.34 9.0
ID (Continuous Drain Current at TC = 25°C) A - 80
ID (Continuous Drain Current at TC = 100°C) A - 56
PD (Maximum Power Dissipation at TC = 25°C) W - 140
VGS(th) (Gate Threshold Voltage) V 2.0 4.0
TJ (Operating Junction Temperature) °C - 175
TSTG (Storage Temperature Range) °C -55 175

Key Features

  • Industry standard through-hole power package (TO-220)
  • High-current rating (up to 80A)
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100 kHz
  • Softer body-diode compared to previous silicon generation
  • Improved gate, avalanche, and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
  • Wide portfolio available

Applications

  • DC motors
  • Battery management systems
  • Inverters
  • DC-DC converters
  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits

Q & A

  1. What is the IRFB3607PBF?

    The IRFB3607PBF is a 75V Single N-Channel StrongIRFET™ Power MOSFET produced by Infineon Technologies.

  2. What package type does the IRFB3607PBF use?

    The IRFB3607PBF is housed in a TO-220 package.

  3. What are the typical and maximum RDS(on) values for the IRFB3607PBF?

    The typical RDS(on) is 7.34 mΩ, and the maximum is 9.0 mΩ.

  4. What is the continuous drain current rating at TC = 25°C and TC = 100°C?

    The continuous drain current is 80A at TC = 25°C and 56A at TC = 100°C.

  5. What are some of the key features of the IRFB3607PBF?

    Key features include industry standard through-hole power package, high-current rating, product qualification according to JEDEC standard, and softer body-diode compared to previous silicon generation.

  6. What are some potential applications for the IRFB3607PBF?

    Potential applications include DC motors, battery management systems, inverters, DC-DC converters, high efficiency synchronous rectification in SMPS, and uninterruptible power supply.

  7. What is the operating junction temperature range for the IRFB3607PBF?

    The operating junction temperature range is -55°C to 175°C.

  8. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation is 140W.

  9. Does the IRFB3607PBF have improved ruggedness features?

    Yes, it has improved gate, avalanche, and dynamic dv/dt ruggedness.

  10. Is the IRFB3607PBF qualified according to any industry standards?

    Yes, it is qualified according to JEDEC standard.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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In Stock

$1.42
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Similar Products

Part Number IRFB3607PBF IRFB3207PBF IRFB3307PBF IRFB3507PBF IRFB3607GPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V 75 V 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 170A (Tc) 130A (Tc) 97A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V 4.5mOhm @ 75A, 10V 6.3mOhm @ 75A, 10V 8.8mOhm @ 58A, 10V 9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA 4V @ 150µA 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V 260 nC @ 10 V 180 nC @ 10 V 130 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3070 pF @ 50 V 7600 pF @ 50 V 5150 pF @ 50 V 3540 pF @ 50 V 3070 pF @ 50 V
FET Feature - - - - -
Power Dissipation (Max) 140W (Tc) 330W (Tc) 200W (Tc) 190W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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