BSC016N06NSSCATMA1
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Infineon Technologies BSC016N06NSSCATMA1

Manufacturer No:
BSC016N06NSSCATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRENCH 40<-<100V PG-WSON-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSC016N06NSSCATMA1 is a high-performance OptiMOS™ 5 60 V power MOSFET from Infineon Technologies. This device is packaged in the SuperSO8 DSC (dual-side cooling) package, which enhances thermal performance by providing two paths for heat dissipation: through the bottom of the PCB and through the top via an exposed clip and heatsink. This design allows for improved reliability and higher power density, making it an ideal choice for various power management applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-Resistance)1.6 mΩ (max)
ID (Drain Current)100 A
TJ(max) (Junction Temperature)175°C
PackageSuperSO8 DSC
Thermal Resistance (RthJC)0.72 K/W (top-side)

Key Features

  • High performance silicon technology
  • Low top-side thermal resistance (RthJC) of 0.72 K/W
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products
  • Improved heat dissipation for high power density and improved reliability
  • Lower conduction losses and switching losses for higher system efficiency
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6, easy to design-in without PCB layout changes

Applications

The BSC016N06NSSCATMA1 is suitable for a variety of power management applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial power systems
  • Automotive systems requiring high power density and reliability
  • Renewable energy systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSC016N06NSSCATMA1?
    The maximum drain-source voltage is 60 V.
  2. What is the on-resistance (RDS(on)) of this MOSFET?
    The on-resistance is 1.6 mΩ (max).
  3. What is the maximum drain current (ID)?
    The maximum drain current is 100 A.
  4. What is the junction temperature (TJ(max)) rating?
    The junction temperature rating is 175°C.
  5. What package type is used for the BSC016N06NSSCATMA1?
    The package type is SuperSO8 DSC.
  6. How does the SuperSO8 DSC package enhance thermal performance?
    The SuperSO8 DSC package enhances thermal performance by providing two paths for heat dissipation: through the bottom of the PCB and through the top via an exposed clip and heatsink.
  7. What are the benefits of the low top-side thermal resistance (RthJC)?
    The low top-side thermal resistance of 0.72 K/W helps in reducing the temperature of the PCB and improving overall system reliability.
  8. Is the BSC016N06NSSCATMA1 compatible with other package types?
    Yes, it is compatible with SuperSO8 and PQFN 5x6 products, making it a drop-in replacement without needing PCB layout changes.
  9. What are some typical applications for this MOSFET?
    Typical applications include power supplies, DC-DC converters, motor control, industrial power systems, automotive systems, and renewable energy systems.
  10. How does this MOSFET contribute to system efficiency?
    The BSC016N06NSSCATMA1 contributes to higher system efficiency by reducing conduction losses and switching losses.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:234A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.3V @ 95µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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