Overview
The PSMN1R0-40YLDX is a high-performance N-channel enhancement mode MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's NextPower-S3 Schottky-Plus technology series, offering advanced TrenchMOS Superjunction technology. It is packaged in the LFPAK56 (Power-SO8, SOT1023) package, which is designed for high-power applications. The MOSFET features a low on-state resistance of 1.1 mΩ and can handle continuous currents up to 280 A, making it suitable for demanding power management and switching applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 150 °C | - | - | 40 | V |
| VDSM (Peak Drain-Source Voltage) | tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ; pulsed | - | - | 45 | V |
| VDGR (Drain-Gate Voltage) | 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ | - | - | 40 | V |
| VGS(th) (Gate-Source Threshold Voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.05 | 1.7 | 2.2 | V |
| RDS(on) (On-State Resistance) | VGS = 4.5 V; ID = 250 A; Tj = 25 °C | - | 1.1 | - | mΩ |
| ID (Continuous Drain Current) | Tc = 25 °C | - | - | 280 | A |
| Ptot (Total Power Dissipation) | Tc = 25 °C | - | - | 198 | W |
Key Features
- Advanced TrenchMOS Superjunction Technology: Enhances performance with lower on-state resistance and improved switching characteristics.
- Low On-State Resistance: 1.1 mΩ at VGS = 4.5 V, ID = 250 A, and Tj = 25 °C.
- High Continuous Current: Up to 280 A, making it suitable for high-power applications.
- Logic Level Gate Drive: Compatible with standard logic levels, simplifying the drive circuitry.
- LFPAK56 Package: Power-SO8 (SOT1023) package provides a compact and thermally efficient design.
- Compliance with Standards: Halogen-free and compliant with RoHS and REACH standards.
Applications
- Power Management: Suitable for high-power DC-DC converters, power supplies, and battery management systems.
- Motor Control: Used in motor drives, servo motors, and other high-current motor control applications.
- Industrial Automation: Applies to various industrial automation systems requiring high power and efficiency.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.
- Automotive Systems: Suitable for automotive applications such as electric vehicles and hybrid vehicles.
Q & A
- What is the maximum drain-source voltage of the PSMN1R0-40YLDX?
The maximum drain-source voltage (VDS) is 40 V.
- What is the on-state resistance of the PSMN1R0-40YLDX?
The on-state resistance (RDS(on)) is 1.1 mΩ at VGS = 4.5 V, ID = 250 A, and Tj = 25 °C.
- What is the maximum continuous drain current of the PSMN1R0-40YLDX?
The maximum continuous drain current (ID) is 280 A.
- What package type is used for the PSMN1R0-40YLDX?
The device is packaged in the LFPAK56 (Power-SO8, SOT1023) package.
- Is the PSMN1R0-40YLDX compliant with environmental standards?
Yes, it is halogen-free and compliant with RoHS and REACH standards.
- What are some typical applications for the PSMN1R0-40YLDX?
Typical applications include power management, motor control, industrial automation, renewable energy systems, and automotive systems.
- What is the gate-source threshold voltage of the PSMN1R0-40YLDX?
The gate-source threshold voltage (VGS(th)) is between 1.05 V and 2.2 V at ID = 1 mA; VDS = VGS; Tj = 25 °C.
- How does the NextPower-S3 Schottky-Plus technology benefit the PSMN1R0-40YLDX?
This technology enhances the MOSFET's performance by providing lower on-state resistance and improved switching characteristics.
- What is the total power dissipation of the PSMN1R0-40YLDX?
The total power dissipation (Ptot) is 198 W at Tc = 25 °C.
- Can the PSMN1R0-40YLDX be used in high-temperature environments?
Yes, it can operate up to a junction temperature (Tj) of 150 °C.
