Overview
The PBSS304NZ,135 is a 60 V, 5.2 A NPN low VCEsat (BISS) transistor manufactured by Nexperia USA Inc. This transistor is housed in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. It is part of Nexperia’s extensive portfolio of bipolar transistors, known for their high performance and efficiency. The PBSS304NZ is designed to offer high collector current capability, high collector current gain, and low collector-emitter saturation voltage, making it suitable for various high-voltage applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO | open base | - | - | 60 | V |
| IC | - | - | - | 5.2 | A |
| ICM | single pulse; tp ≤1 ms | - | - | 10.4 | A |
| RCEsat | IC = 4 A; IB = 200 mA | - | 39 | 55 | mΩ |
| hFE | VCE = 2 V; IC = 0.5 A | 300 | 520 | - | - |
| Tj | - | - | - | 150 | °C |
| Tamb | - | -65 | - | 150 | °C |
| Ptot | Tamb ≤25 °C | - | - | 0.7 | W |
Key Features
- Low Collector-Emitter Saturation Voltage (VCEsat): Ensures high efficiency due to less heat generation.
- High Collector Current Capability (IC and ICM): Supports high current applications.
- High Collector Current Gain (hFE) at High IC: Provides reliable performance in high current conditions.
- Smaller Required PCB Area: Compared to conventional transistors, it requires less space on the Printed-Circuit Board (PCB).
Applications
- High-Voltage DC-to-DC Conversion: Suitable for high-voltage power conversion applications.
- High-Voltage MOSFET Gate Driving: Ideal for driving high-voltage MOSFETs.
- High-Voltage Motor Control: Used in motor control circuits requiring high voltage and current handling.
- High-Voltage Power Switches: Applicable in power switches for motors, fans, and other high-voltage devices.
- Automotive Applications: Qualified for use in automotive systems due to its robust and reliable performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the PBSS304NZ transistor?
The maximum collector-emitter voltage (VCEO) is 60 V.
- What is the maximum collector current (IC) of the PBSS304NZ transistor?
The maximum collector current (IC) is 5.2 A.
- What is the peak collector current (ICM) of the PBSS304NZ transistor?
The peak collector current (ICM) is 10.4 A for a single pulse with tp ≤1 ms.
- What is the collector-emitter saturation resistance (RCEsat) of the PBSS304NZ transistor?
The collector-emitter saturation resistance (RCEsat) is between 39 mΩ and 55 mΩ at IC = 4 A and IB = 200 mA.
- What is the DC current gain (hFE) of the PBSS304NZ transistor?
The DC current gain (hFE) is minimum 300 at VCE = 2 V and IC = 0.5 A.
- What is the maximum junction temperature (Tj) of the PBSS304NZ transistor?
The maximum junction temperature (Tj) is 150 °C.
- What is the package type of the PBSS304NZ transistor?
The PBSS304NZ transistor is packaged in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
- What are the typical applications of the PBSS304NZ transistor?
The typical applications include high-voltage DC-to-DC conversion, high-voltage MOSFET gate driving, high-voltage motor control, high-voltage power switches, and automotive applications.
- Is the PBSS304NZ transistor automotive qualified?
Yes, the PBSS304NZ transistor is qualified for automotive applications.
- What is the PNP complement of the PBSS304NZ transistor?
The PNP complement of the PBSS304NZ transistor is the PBSS304PZ.
