Overview
The BC857BLT1 is a PNP general-purpose transistor manufactured by Onsemi. It is designed for low power surface mount applications and is housed in the SOT-23 (TO-236AB) package. This transistor is suitable for general-purpose amplifier and switching applications. It is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulations.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -45 | V |
| Collector-Base Voltage | VCBO | -50 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mA |
| Collector Current - Peak (1 ms pulse) | IC | -200 | mA |
| Collector-Emitter Breakdown Voltage (IC = -10 mA) | V(BR)CEO | -45 | V |
| Collector-Emitter Breakdown Voltage (IC = -10 μA, VEB = 0) | V(BR)CES | -50 | V |
| Collector-Base Breakdown Voltage (IC = -10 μA) | V(BR)CBO | -50 | V |
| Emitter-Base Breakdown Voltage (IE = -1.0 μA) | V(BR)EBO | -5.0 | V |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 125 - 800 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 | V |
| Junction Temperature | TJ | 150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant.
- Housed in the SOT-23 (TO-236AB) package, designed for low power surface mount applications.
- General-purpose amplifier and switching applications.
- High DC current gain (hFE) ranging from 125 to 800.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
Applications
- General-purpose amplifier applications.
- Switching applications.
- Automotive electronics.
- Industrial control systems.
- Consumer electronics.
- Mobile and wearable devices.
Q & A
- What is the collector-emitter voltage rating of the BC857BLT1 transistor?
The collector-emitter voltage rating of the BC857BLT1 transistor is -45 V.
- What package type is the BC857BLT1 transistor housed in?
The BC857BLT1 transistor is housed in the SOT-23 (TO-236AB) package.
- Is the BC857BLT1 transistor RoHS compliant?
- What is the maximum collector current of the BC857BLT1 transistor?
The maximum continuous collector current of the BC857BLT1 transistor is -100 mA, and the peak collector current (1 ms pulse) is -200 mA.
- What are the typical applications of the BC857BLT1 transistor?
The BC857BLT1 transistor is used in general-purpose amplifier and switching applications, as well as in automotive, industrial, and consumer electronics.
- What is the DC current gain (hFE) of the BC857BLT1 transistor?
The DC current gain (hFE) of the BC857BLT1 transistor ranges from 125 to 800.
- What is the maximum junction temperature of the BC857BLT1 transistor?
The maximum junction temperature of the BC857BLT1 transistor is 150°C.
- Is the BC857BLT1 transistor AEC-Q101 qualified?
- What is the emitter-base breakdown voltage of the BC857BLT1 transistor?
The emitter-base breakdown voltage of the BC857BLT1 transistor is -5.0 V.
- What is the collector-emitter saturation voltage of the BC857BLT1 transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BC857BLT1 transistor is typically -0.3 V.
