Overview
The BC856ALT3G is a PNP general-purpose transistor produced by onsemi. It is part of the BC856 series, which includes several variants designed for various applications. This transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of electronic designs. The BC856ALT3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mA |
| DC Current Gain (hFE) | hFE | 125 - 475 | - |
| Base-Emitter On Voltage (VBE(on)) | VBE(on) | -0.6 to -0.82 | V |
| Current-Gain Bandwidth Product (fT) | fT | 100 | MHz |
| Output Capacitance (Cob) | Cob | 4.5 | pF |
| Junction Temperature (TJ) | TJ | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
- High collector-emitter voltage (VCEO) of -65 V and high collector-base voltage (VCBO) of -80 V.
- Low noise figure and high current gain-bandwidth product (fT) of 100 MHz.
- Small SOT23 (TO-236AB) package, ideal for space-constrained designs.
- Wide operating temperature range from -55°C to +150°C.
Applications
The BC856ALT3G transistor is versatile and can be used in a variety of applications, including:
- General-purpose switching and amplification in electronic circuits.
- Automotive systems due to its AEC-Q101 qualification and PPAP capability.
- Industrial control systems requiring reliable and high-performance transistors.
- Consumer electronics, such as audio amplifiers and power supplies.
- Mobile and wearable devices where space and performance are critical.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC856ALT3G transistor?
The collector-emitter voltage (VCEO) of the BC856ALT3G transistor is -65 V.
- What is the package type of the BC856ALT3G transistor?
The BC856ALT3G transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- Is the BC856ALT3G transistor RoHS compliant?
- What is the current gain-bandwidth product (fT) of the BC856ALT3G transistor?
The current gain-bandwidth product (fT) of the BC856ALT3G transistor is 100 MHz.
- What are the typical applications of the BC856ALT3G transistor?
The BC856ALT3G transistor is used in general-purpose switching and amplification, automotive systems, industrial control systems, consumer electronics, and mobile/wearable devices.
- What is the maximum junction temperature (TJ) of the BC856ALT3G transistor?
The maximum junction temperature (TJ) of the BC856ALT3G transistor is +150°C.
- Is the BC856ALT3G transistor AEC-Q101 qualified?
- What is the emitter-base voltage (VEBO) of the BC856ALT3G transistor?
The emitter-base voltage (VEBO) of the BC856ALT3G transistor is -5.0 V.
- What is the collector current (IC) rating of the BC856ALT3G transistor?
The collector current (IC) rating of the BC856ALT3G transistor is -100 mA.
- What is the base-emitter on voltage (VBE(on)) of the BC856ALT3G transistor?
The base-emitter on voltage (VBE(on)) of the BC856ALT3G transistor ranges from -0.6 to -0.82 V.
