Overview
The BC857BLT1G is a general-purpose NPN bipolar junction transistor (BJT) produced by onsemi. It is part of the BC857 series, known for its high current gain and low noise figure, making it suitable for a wide range of applications. The transistor is packaged in a SOT-23 (TO-236AB) case, which is compact and ideal for space-constrained designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | - | -30 | V |
| Collector-Base Breakdown Voltage | V(BR)CBO | -50 | - | -30 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | - | -5.0 | V |
| Collector Cutoff Current (VCB = -30 V) | ICBO | - | - | 15 nA | |
| DC Current Gain (hFE) | hFE | 100 | - | - | |
| Base-Emitter On Voltage (VCE = -5.0 V, IC = -2.0 mA) | VBE(on) | -0.6 | - | -0.75 | V |
| Collector-Emitter Saturation Voltage (VCE = -5.0 V, IC = -10 mA) | VCE(sat) | -0.7 | - | -0.9 | V |
| Continuous Collector Current | IC | - | - | 1.5 mA | |
| Collector-Emitter Voltage Max | VCE | - | - | 700 V |
Key Features
- High DC current gain (hFE) of 100 to 300, ensuring reliable amplification and switching performance.
- Low noise figure, making it suitable for noise-sensitive applications.
- Compact SOT-23 (TO-236AB) package, ideal for space-constrained designs.
- Low collector-emitter saturation voltage, reducing power consumption in switching applications.
- High collector-base and collector-emitter breakdown voltages, providing robustness against voltage spikes.
Applications
The BC857BLT1G transistor is versatile and can be used in a variety of applications, including:
- General-purpose amplification and switching circuits.
- Audio and video amplifiers.
- Automotive and industrial control systems.
- Low-noise amplifiers and pre-amplifiers.
- Power management and voltage regulation circuits.
Q & A
- What is the package type of the BC857BLT1G transistor?
The BC857BLT1G transistor is packaged in a SOT-23 (TO-236AB) case. - What is the maximum collector-emitter voltage for the BC857BLT1G?
The maximum collector-emitter voltage is 700 V. - What is the typical DC current gain (hFE) of the BC857BLT1G?
The typical DC current gain (hFE) is 100 to 300. - What is the collector-emitter saturation voltage for the BC857BLT1G?
The collector-emitter saturation voltage is typically -0.7 to -0.9 V. - What are some common applications of the BC857BLT1G transistor?
It is used in general-purpose amplification, switching circuits, audio and video amplifiers, automotive and industrial control systems, and low-noise amplifiers. - What is the noise figure of the BC857BLT1G transistor?
The noise figure is typically around 4.0 dB. - What is the maximum continuous collector current for the BC857BLT1G?
The maximum continuous collector current is 1.5 mA. - What is the emitter-base breakdown voltage for the BC857BLT1G?
The emitter-base breakdown voltage is -5.0 V. - Is the BC857BLT1G suitable for high-frequency applications?
Yes, it has a current-gain bandwidth product (fT) of 100 MHz, making it suitable for high-frequency applications. - Where can I find detailed specifications for the BC857BLT1G?
Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key, Mouser, and Avnet.
