BSV52LT1G
  • Share:

onsemi BSV52LT1G

Manufacturer No:
BSV52LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 12V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSV52LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for switching applications and is packaged in a compact SOT-23-3 (TO-236) surface mount configuration. It is known for its high frequency capabilities and low power consumption, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValue
ConfigurationSingle
Maximum DC Collector Current100 mA
Collector-Emitter Voltage (VCEO Max)12 V
Collector-Base Voltage (VCBO)20 V
Maximum Power Dissipation225 mW
Thermal Resistance, Junction-to-Ambient417 °C/W
Junction and Storage Temperature-55 to +150 °C
Frequency400 MHz
Package TypeSOT-23-3 (TO-236)

Key Features

  • High frequency operation up to 400 MHz
  • Low power consumption with a maximum power dissipation of 225 mW
  • Compact SOT-23-3 (TO-236) surface mount package
  • High collector-emitter voltage (VCEO) of 12 V and collector-base voltage (VCBO) of 20 V
  • Wide junction and storage temperature range of -55 to +150 °C

Applications

The BSV52LT1G transistor is suitable for various switching and amplification applications in electronic circuits. It can be used in audio amplifiers, RF amplifiers, and other high-frequency applications. Additionally, its compact package makes it ideal for use in space-constrained designs such as mobile devices, automotive systems, and industrial control systems.

Q & A

  1. What is the maximum DC collector current of the BSV52LT1G transistor?
    The maximum DC collector current is 100 mA.
  2. What is the collector-emitter voltage (VCEO) of the BSV52LT1G?
    The collector-emitter voltage (VCEO) is 12 V.
  3. What is the thermal resistance, junction-to-ambient, of the BSV52LT1G?
    The thermal resistance, junction-to-ambient, is 417 °C/W.
  4. What is the frequency range of the BSV52LT1G transistor?
    The BSV52LT1G operates up to 400 MHz.
  5. What is the package type of the BSV52LT1G?
    The package type is SOT-23-3 (TO-236).
  6. What is the junction and storage temperature range of the BSV52LT1G?
    The junction and storage temperature range is -55 to +150 °C.
  7. What are some common applications of the BSV52LT1G transistor?
    Common applications include audio amplifiers, RF amplifiers, mobile devices, automotive systems, and industrial control systems.
  8. What is the maximum power dissipation of the BSV52LT1G transistor?
    The maximum power dissipation is 225 mW.
  9. Is the BSV52LT1G transistor RoHS compliant?
    Yes, the BSV52LT1G transistor is RoHS compliant.
  10. Where can I purchase the BSV52LT1G transistor?
    The BSV52LT1G transistor can be purchased from distributors such as Digi-Key, Mouser, and LCSC.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 1V
Power - Max:225 mW
Frequency - Transition:400MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.40
501

Please send RFQ , we will respond immediately.

Same Series
BSV52LT1
BSV52LT1
TRANS NPN 12V 0.1A SOT23-3

Similar Products

Part Number BSV52LT1G BSV52LT1
Manufacturer onsemi onsemi
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 12 V 12 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 1V 40 @ 10mA, 1V
Power - Max 225 mW 225 mW
Frequency - Transition 400MHz 400MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
MJ2955
MJ2955
NTE Electronics, Inc
TRANS PNP 60V 15A TO3
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN