Overview
The onsemi BCV26 is a PNP Darlington transistor designed for applications that require extremely high current gain at collector currents up to 800 mA. This device is sourced from Process 61 and is suitable for a wide range of general usage applications due to its high performance characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Collector-Base Voltage (VCBO) | 40 | V |
| Emitter-Base Voltage (VEBO) | 10 | V |
| Collector Current - Continuous (IC) | 1.2 | A |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| DC Current Gain (hFE) at IC = 1.0 mA, VCE = 5.0 V | 4000 | |
| DC Current Gain (hFE) at IC = 10 mA, VCE = 5.0 V | 10000 | |
| DC Current Gain (hFE) at IC = 100 mA, VCE = 5.0 V | 20000 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 100 mA, IB = 0.1 mA | 1.0 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 100 mA, IB = 0.1 mA | 1.5 | V |
| Current Gain - Bandwidth Product (fT) at IC = 30 mA, VCE = 5.0 V, f = 100 MHz | 220 | MHz |
| Collector Capacitance (Cc) at VCB = 30 V, IE = 0, f = 1.0 MHz | 3.5 | pF |
| Package Type | SOT-23 (TO-236) |
Key Features
- Extremely high current gain, with hFE values up to 20,000 at IC = 100 mA and VCE = 5.0 V.
- High collector current capability up to 1.2 A.
- Low collector-emitter saturation voltage (VCE(sat)) of 1.0 V at IC = 100 mA and IB = 0.1 mA.
- Low base-emitter saturation voltage (VBE(sat)) of 1.5 V at IC = 100 mA and IB = 0.1 mA.
- High current gain-bandwidth product (fT) of 220 MHz at IC = 30 mA, VCE = 5.0 V, and f = 100 MHz.
- Compact SOT-23 package.
Applications
The onsemi BCV26 is suitable for various applications requiring high current gain and low saturation voltages. These include:
- Power amplifiers and switches.
- Relay drivers and motor control circuits.
- High-current LED drivers.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the BCV26?
The maximum collector-emitter voltage (VCEO) of the BCV26 is 30 V. - What is the maximum collector current (IC) of the BCV26?
The maximum collector current (IC) of the BCV26 is 1.2 A. - What is the typical DC current gain (hFE) of the BCV26 at IC = 100 mA and VCE = 5.0 V?
The typical DC current gain (hFE) of the BCV26 at IC = 100 mA and VCE = 5.0 V is 20,000. - What is the collector-emitter saturation voltage (VCE(sat)) of the BCV26 at IC = 100 mA and IB = 0.1 mA?
The collector-emitter saturation voltage (VCE(sat)) of the BCV26 at IC = 100 mA and IB = 0.1 mA is 1.0 V. - What is the base-emitter saturation voltage (VBE(sat)) of the BCV26 at IC = 100 mA and IB = 0.1 mA?
The base-emitter saturation voltage (VBE(sat)) of the BCV26 at IC = 100 mA and IB = 0.1 mA is 1.5 V. - What is the current gain-bandwidth product (fT) of the BCV26?
The current gain-bandwidth product (fT) of the BCV26 is 220 MHz at IC = 30 mA, VCE = 5.0 V, and f = 100 MHz. - What is the package type of the BCV26?
The package type of the BCV26 is SOT-23 (TO-236). - What are some typical applications of the BCV26?
The BCV26 is typically used in power amplifiers, relay drivers, motor control circuits, high-current LED drivers, and automotive and industrial control systems. - What is the operating and storage junction temperature range of the BCV26?
The operating and storage junction temperature range of the BCV26 is -55 to +150°C. - Is the BCV26 RoHS compliant?
Yes, the BCV26 is RoHS compliant.
