NTB6413ANG
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onsemi NTB6413ANG

Manufacturer No:
NTB6413ANG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 100V 42A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTB6413ANG is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of the PowerTrench family and is designed to offer high efficiency and reliability in various power management applications. Although the device is currently discontinued and not recommended for new designs, it remains a significant component in existing systems and for replacement purposes.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current42 A
Rds(on) - On-Resistance28 mΩ
Package TypeTO-220

Key Features

  • High current capability: The NTB6413ANG can handle a continuous drain current of 42 A, making it suitable for high-power applications.
  • Low on-resistance: With an Rds(on) of 28 mΩ, this MOSFET minimizes power losses and enhances overall system efficiency.
  • High voltage rating: The device has a drain-source breakdown voltage of 100 V, ensuring robust performance in various power management scenarios.
  • PowerTrench technology: This technology enhances the device's performance by reducing on-resistance and improving thermal characteristics.

Applications

The NTB6413ANG is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power management
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the drain-source breakdown voltage of the NTB6413ANG?
    The drain-source breakdown voltage is 100 V.
  2. What is the continuous drain current rating of the NTB6413ANG?
    The continuous drain current rating is 42 A.
  3. What is the on-resistance (Rds(on)) of the NTB6413ANG?
    The on-resistance is 28 mΩ.
  4. What package type is the NTB6413ANG available in?
    The NTB6413ANG is available in the TO-220 package type.
  5. Is the NTB6413ANG recommended for new designs?
    No, the NTB6413ANG is discontinued and not recommended for new designs.
  6. What technology does the NTB6413ANG use?
    The NTB6413ANG uses PowerTrench technology.
  7. What are some typical applications of the NTB6413ANG?
    Typical applications include power supplies, motor control systems, industrial power management, and automotive systems.
  8. Where can I find detailed specifications for the NTB6413ANG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser.
  9. What is the current availability of the NTB6413ANG?
    The NTB6413ANG is available from various distributors, although it is discontinued for new designs.
  10. How can I contact onsemi for more information about the NTB6413ANG?
    You can contact an onsemi representative for more information.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 42A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
NTP6413ANG
NTP6413ANG
POWER MOSFET 100V 42A, SINGLE N-
NTB6413ANT4G
NTB6413ANT4G
MOSFET N-CH 100V 42A D2PAK
NVB6413ANT4G
NVB6413ANT4G
MOSFET N-CH 100V 42A D2PAK-3

Similar Products

Part Number NTB6413ANG NTB6410ANG NTB6411ANG NTB6412ANG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 76A (Tc) 77A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 42A, 10V 13mOhm @ 76A, 10V 14mOhm @ 72A, 10V 18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 120 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V 4500 pF @ 25 V 3700 pF @ 25 V 3500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 136W (Tc) 188W (Tc) 217W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK D²PAK D²PAK D²PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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