Overview
The NTMFS5C460NLT1G is a power MOSFET from onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This N-channel MOSFET features a compact DFN5 (5x6 mm) package, making it ideal for space-constrained designs. It is Pb-free and RoHS compliant, ensuring environmental sustainability. With its robust specifications and features, this MOSFET is suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 78 | A |
| Continuous Drain Current (TC = 100°C) | ID | 55 | A |
| Power Dissipation (TC = 25°C) | PD | 50 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 520 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 56 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 107 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Case Thermal Resistance | RθJC | 3.0 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 42 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 35 A) | RDS(on) | 3.7 - 4.5 | mΩ |
Key Features
- Small Footprint: Compact 5x6 mm DFN5 package for space-efficient designs.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 3.7 mΩ at VGS = 10 V and ID = 35 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Pb-free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
- High Current Handling: Capable of handling continuous drain currents up to 78 A at TC = 25°C.
Applications
The NTMFS5C460NLT1G is suitable for various high-power applications, including:
- Power Management: DC-DC converters, power supplies, and voltage regulators.
- Motor Control: Motor drives, servo motors, and other high-current motor applications.
- Switching Applications: High-frequency switching circuits, such as those in power inverters and switching power supplies.
- Automotive Systems: Battery management, electric vehicle charging, and other automotive power systems.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5C460NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V. - What is the continuous drain current at 25°C?
The continuous drain current (ID) at 25°C is 78 A. - What is the thermal resistance from junction to case?
The junction-to-case thermal resistance (RθJC) is 3.0 °C/W. - Is the NTMFS5C460NLT1G Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant. - What is the typical on-resistance at VGS = 10 V and ID = 35 A?
The typical on-resistance (RDS(on)) is 3.7 mΩ. - What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is +175°C. - What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 107 mJ. - What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260°C. - What package type does the NTMFS5C460NLT1G come in?
The NTMFS5C460NLT1G comes in a DFN5 (5x6 mm) package. - What are some typical applications for this MOSFET?
Typical applications include power management, motor control, switching applications, and automotive systems.
