Overview
The NTMFS5C410NLT1G is a single N-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and minimal conduction losses. The MOSFET features a small footprint in a DFN5 (5x6 mm) package, making it ideal for compact design requirements. Although this device has been discontinued, it remains relevant for existing designs and legacy systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 330 | A |
| Continuous Drain Current (TC = 100°C) | ID | 230 | A |
| Power Dissipation (TC = 25°C) | PD | 139 | W |
| Power Dissipation (TC = 100°C) | PD | 56 | W |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.65 - 0.82 mΩ | mΩ |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 162 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 706 mJ | mJ |
Key Features
- Small Footprint: The device is packaged in a compact DFN5 (5x6 mm) package, ideal for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 0.65 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses due to low total gate charge and capacitance.
- Environmental Compliance: Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- High Current Capability: Supports continuous drain current up to 330 A at TC = 25°C.
Applications
- Power Management: Suitable for high-power switching applications, including DC-DC converters and power supplies.
- Motor Control: Used in motor drive circuits due to its high current handling and low on-resistance.
- Industrial Automation: Applies to various industrial automation systems requiring reliable and efficient power switching.
- Automotive Systems: Can be used in automotive applications such as battery management and power distribution.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5C410NLT1G?
The maximum drain-to-source voltage (VDSS) is 40 V.
- What is the gate-to-source voltage range for this MOSFET?
The gate-to-source voltage (VGS) range is ±20 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 330 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The on-resistance (RDS(on)) is between 0.65 mΩ and 0.82 mΩ.
- Is the NTMFS5C410NLT1G environmentally compliant?
Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy (EAS) is 706 mJ.
- Why is the NTMFS5C410NLT1G discontinued?
The device has been discontinued and is not recommended for new designs. Contact onsemi for alternative options.
- What are some typical applications of the NTMFS5C410NLT1G?
Typical applications include power management, motor control, industrial automation, and automotive systems.
- What is the package type of the NTMFS5C410NLT1G?
The device is packaged in a DFN5 (5x6 mm) package.
