NCV8440ASTT1G
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onsemi NCV8440ASTT1G

Manufacturer No:
NCV8440ASTT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 59V 2.6A SOT223
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NCV8440ASTT1G is a Protected Power MOSFET produced by onsemi, designed for high-performance applications in automotive and industrial markets. This N-channel, logic-level MOSFET features advanced protection mechanisms and is AEC-Q100 qualified, making it suitable for demanding environments. The device is packaged in a SOT-223 (TO-261) case and is lead-free and RoHS compliant.

Key Specifications

Parameter Symbol Min Typ Max Unit
Drain-to-Source Voltage (Internally Clamped) VDSS 52 - 59 V
Gate-to-Source Voltage - Continuous VGS - - ±15 V
Drain Current - Continuous @ TA = 25°C ID - - 2.6 A
Drain Current - Single Pulse (tp = 10 μs) IDM - - 10 A
Total Power Dissipation @ TA = 25°C PD - - 1.69 W
Operating and Storage Temperature Range TJ, Tstg -55 - 150 °C
Thermal Resistance, Junction-to-Ambient RθJA - - 74 °C/W
Maximum Lead Temperature for Soldering Purposes TL - - 260 °C
Gate Threshold Voltage VGS(th) 1.1 1.5 1.9 V
Static Drain-to-Source On-Resistance (RDS(on)) @ VGS = 10 V, ID = 2.6 A RDS(on) - 95 -
ESD Protection - Human Body Model ESD - - 5000 V

Key Features

  • Diode Clamp Between Gate and Source
  • ESD Protection - Human Body Model 5000 V
  • Active Over-Voltage Gate to Drain Clamp
  • Scalable to Lower or Higher RDS(on)
  • Internal Series Gate Resistance
  • High Energy Capability for Inductive Loads
  • Low Switching Noise Generation
  • AEC-Q100 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant

Applications

The NCV8440ASTT1G is designed for various applications in automotive and industrial markets, including:

  • Solenoid Drivers
  • Lamp Drivers
  • Small Motor Drivers

Q & A

  1. What is the maximum drain-to-source voltage for the NCV8440ASTT1G?

    The maximum drain-to-source voltage (VDSS) is 52-59 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) is 2.6 A at 25°C.

  3. Does the NCV8440ASTT1G have ESD protection?

    Yes, it has ESD protection with a Human Body Model rating of 5000 V.

  4. What is the operating temperature range for this MOSFET?

    The operating and storage temperature range is -55°C to 150°C.

  5. Is the NCV8440ASTT1G AEC-Q100 qualified?

    Yes, it is AEC-Q100 qualified and PPAP capable.

  6. What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 2.6 A?

    The typical on-resistance (RDS(on)) is 95 mΩ at VGS = 10 V and ID = 2.6 A.

  7. What are the key applications for the NCV8440ASTT1G?

    Key applications include solenoid drivers, lamp drivers, and small motor drivers in automotive and industrial markets.

  8. Is the NCV8440ASTT1G lead-free and RoHS compliant?

    Yes, it is lead-free and RoHS compliant.

  9. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 260°C.

  10. What is the thermal resistance, junction-to-ambient (RθJA), for this device?

    The thermal resistance, junction-to-ambient (RθJA), is 74°C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):59 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):3.5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id:1.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 4.5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:155 pF @ 35 V
FET Feature:- 
Power Dissipation (Max):1.69W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NCV8440ASTT3G
NCV8440ASTT3G
MOSFET N-CH 59V 2.6A SOT223
NCV8440STT1G
NCV8440STT1G
MOSFET N-CH 59V 2.6A SOT223
NCV8440STT3G
NCV8440STT3G
MOSFET N-CH 59V 2.6A SOT223

Similar Products

Part Number NCV8440ASTT1G NCV8440ASTT3G NCV8440STT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 59 V 59 V 59 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V 3.5V, 10V 3.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.6A, 10V 110mOhm @ 2.6A, 10V 110mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id 1.9V @ 100µA 1.9V @ 100µA 1.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 4.5 V 4.5 nC @ 4.5 V 4.5 nC @ 4.5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 155 pF @ 35 V 155 pF @ 35 V 155 pF @ 35 V
FET Feature - - -
Power Dissipation (Max) 1.69W (Ta) 1.69W (Ta) 1.69W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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