Overview
The FDMS86520L is an N-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is specifically designed to enhance the overall efficiency and minimize switch node ringing in DC/DC converters, whether using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low on-resistance (rDS(on)), fast switching speed, and improved body diode reverse recovery performance.
Key Specifications
| Parameter | Rating | Units |
|---|---|---|
| VDS (Drain to Source Voltage) | 60 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current) - Continuous (TC = 25°C) | 22 | A |
| ID (Drain Current) - Continuous (TA = 25°C) | 13.5 | A |
| EAS (Single Pulse Avalanche Energy) | 91 | mJ |
| PD (Power Dissipation) - TC = 25°C | 69 | W |
| PD (Power Dissipation) - TA = 25°C | 2.5 | W |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | -55 to +150 | °C |
| RθJC (Thermal Resistance, Junction to Case) | 1.8 | °C/W |
| RθJA (Thermal Resistance, Junction to Ambient) | 50 | °C/W |
| rDS(on) at VGS = 10 V, ID = 13.5 A | 6.7 - 8.2 | mΩ |
| rDS(on) at VGS = 4.5 V, ID = 11.5 A | 9.1 - 11.7 | mΩ |
Key Features
- Maximum rDS(on) of 8.2 mΩ at VGS = 10 V, ID = 13.5 A and 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
- Advanced package and silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
- Low gate charge, fast switching speed, and improved body diode reverse recovery performance
Applications
- Primary Switch in isolated DC/DC converters
- Synchronous Rectifier
- Load Switch
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMS86520L MOSFET?
The maximum drain to source voltage (VDS) is 60 V.
- What is the maximum continuous drain current (ID) at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 22 A.
- What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 1.8 °C/W.
- Is the FDMS86520L MOSFET RoHS compliant?
Yes, the FDMS86520L MOSFET is RoHS compliant.
- What are the typical applications of the FDMS86520L MOSFET?
The typical applications include primary switch in isolated DC/DC converters, synchronous rectifier, and load switch.
- What is the maximum gate to source voltage (VGS) for the FDMS86520L MOSFET?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the single pulse avalanche energy (EAS) rating for this MOSFET?
The single pulse avalanche energy (EAS) rating is 91 mJ.
- What is the operating and storage junction temperature range for the FDMS86520L MOSFET?
The operating and storage junction temperature range is -55 to +150 °C.
- What are the key features of the FDMS86520L MOSFET that contribute to its efficiency?
The key features include low rDS(on), low gate charge, fast switching speed, and improved body diode reverse recovery performance.
- Is the FDMS86520L MOSFET suitable for use in life support systems or FDA Class 3 medical devices?
No, the FDMS86520L MOSFET is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.
