onsemi FDMS86520

Manufacturer No:: FDMS86520
Manufacturer:: onsemi
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 60V 14A/42A 8PQFN
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Product Introduction

Overview

The FDMS86520 is an N-Channel PowerTrench® MOSFET produced by ON Semiconductor. This device is designed to enhance the overall efficiency and minimize switch node ringing in DC/DC converters, whether using synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low drain-source on-resistance (rDS(on)), fast switching speed, and improved body diode reverse recovery performance.

Key Specifications

Parameter	Test Conditions	Min	Typ	Max	Units
V_DS - Drain to Source Breakdown Voltage	ID = 250 μA, V_GS = 0 V			60	V
V_GS - Gate to Source Voltage		-20		+20	V
I_D - Continuous Drain Current	T_J = 25 °C			42	A
r_DS(on) - Drain-Source On-Resistance	V_GS = 10 V, I_D = 14 A			7.4	mΩ
V_GS(th) - Gate to Source Threshold Voltage	V_GS = V_DS, I_D = 250 μA	2.5	3.6	4.5	V
P_D - Power Dissipation	T_J = 25 °C			69	W
T_J - Operating and Storage Junction Temperature Range		-55		+150	°C

Key Features

Advanced package and silicon combination for low r_DS(on) and high efficiency.
Next-generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant.
Optimized for low gate charge, low r_DS(on), fast switching speed, and improved body diode reverse recovery performance.

Applications

Primary switch in isolated DC/DC converters.
Synchronous rectifier.
Load switch.
Motor bridge switch.

Q & A

What is the maximum drain-source breakdown voltage of the FDMS86520 MOSFET?
The maximum drain-source breakdown voltage is 60 V.
What is the continuous drain current rating at T_J = 25 °C?
The continuous drain current rating is 42 A.
What is the typical drain-source on-resistance (r_DS(on)) at V_GS = 10 V and I_D = 14 A?
The typical r_DS(on) is 7.4 mΩ.
What is the gate-source threshold voltage range?
The gate-source threshold voltage range is from 2.5 V to 4.5 V.
Is the FDMS86520 MOSFET RoHS compliant?
What are the typical applications of the FDMS86520 MOSFET?
Typical applications include primary switch in isolated DC/DC converters, synchronous rectifier, load switch, and motor bridge switch.
What is the maximum operating junction temperature of the FDMS86520 MOSFET?
The maximum operating junction temperature is +150 °C.
What is the power dissipation rating at T_J = 25 °C?
The power dissipation rating is 69 W.
Does the FDMS86520 MOSFET have any special package features?
What is the gate charge at V_GS = 10 V?
The gate charge is approximately 28 nC at V_GS = 10 V.

In Stock

UnitPrice: $1.74

Quantity: 433

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Part Number	FDMS86520	FDMS86540	FDMS86550	FDMS86520L	FDMS86320
Manufacturer	onsemi	onsemi	onsemi	onsemi	onsemi
Product Status	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V	80 V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 42A (Tc)	20A (Ta), 50A (Tc)	32A (Ta), 155A (Tc)	13.5A (Ta), 22A (Tc)	10.5A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V	8V, 10V	8V, 10V	4.5V, 10V	8V, 10V
Rds On (Max) @ Id, Vgs	7.4mOhm @ 14A, 10V	3.4mOhm @ 20A, 10V	1.65mOhm @ 32A, 10V	8.2mOhm @ 13.5A, 10V	11.7mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA	4V @ 250µA	4.5V @ 250µA	3V @ 250µA	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V	90 nC @ 10 V	154 nC @ 10 V	63 nC @ 10 V	41 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	2850 pF @ 30 V	6435 pF @ 30 V	11530 pF @ 30 V	4615 pF @ 30 V	2640 pF @ 40 V
FET Feature	-	-	-	-	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)	2.5W (Ta), 96W (Tc)	2.7W (Ta), 156W (Tc)	2.5W (Ta), 69W (Tc)	2.5W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)	8-PQFN (5x6)
Package / Case	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN	8-PowerTDFN

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	8V, 10V
Rds On (Max) @ Id, Vgs:	7.4mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	40 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2850 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 69W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (5x6)
Package / Case:	8-PowerTDFN

onsemi FDMS86520

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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