2N7002H-13
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Diodes Incorporated 2N7002H-13

Manufacturer No:
2N7002H-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 170MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002H-13, produced by Diodes Incorporated, is an N-channel enhancement mode MOSFET designed for high efficiency power management applications. This device is packaged in a small SOT23 surface-mount package, making it ideal for space-constrained designs. The 2N7002H-13 is known for its low on-resistance, low gate threshold voltage, and fast switching speed, which are crucial for efficient power management and motor control applications.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 10µA
On-Resistance (Max) RDS(ON) 7.5Ω @ VGS = 5V, ID = 500mA
Continuous Drain Current (Max) ID 170mA @ TA = +25°C, VGS = 10V
Gate Threshold Voltage (Max) VGS(th) 2.5V @ ID = 250µA
Input Capacitance Ciss 50pF @ VDS = 25V
Operating Temperature Range TJ, TSTG -55 to +150°C
Package Type SOT23

Key Features

  • N-Channel MOSFET: Enhancement mode operation.
  • Low On-Resistance: Minimized on-state resistance for high efficiency.
  • Low Gate Threshold Voltage: Easy to turn on with low gate voltage.
  • Low Input Capacitance: Reduces switching losses.
  • Fast Switching Speed: Ideal for high-frequency applications.
  • Small Surface Mount Package: SOT23 package for compact designs.
  • Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with EU directives.
  • Halogen and Antimony Free: “Green” device with no halogen or antimony.
  • AEC-Q101 Qualified: Suitable for automotive applications requiring high reliability.

Applications

  • Motor Control: Efficient switching and low on-resistance make it suitable for motor control applications.
  • Power Management Functions: Ideal for high efficiency power management in various electronic systems.
  • Automotive Applications: Qualified to AEC-Q101 standards, making it reliable for use in automotive systems.

Q & A

  1. What is the maximum drain-source breakdown voltage of the 2N7002H-13?

    The maximum drain-source breakdown voltage is 60V.

  2. What is the typical on-resistance of the 2N7002H-13?

    The typical on-resistance is 7.5Ω at VGS = 5V and ID = 500mA.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current at 25°C is 170mA.

  4. What is the gate threshold voltage of the 2N7002H-13?

    The gate threshold voltage is up to 2.5V at ID = 250µA.

  5. What is the input capacitance of the 2N7002H-13?

    The input capacitance is 50pF at VDS = 25V.

  6. What is the operating temperature range of the 2N7002H-13?

    The operating temperature range is -55 to +150°C.

  7. What package type is the 2N7002H-13 available in?

    The 2N7002H-13 is available in the SOT23 package.

  8. Is the 2N7002H-13 RoHS compliant?

    Yes, the 2N7002H-13 is fully RoHS compliant and lead-free.

  9. Is the 2N7002H-13 suitable for automotive applications?

    Yes, it is qualified to AEC-Q101 standards, making it suitable for automotive applications.

  10. What are the key applications of the 2N7002H-13?

    The key applications include motor control, power management functions, and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:26 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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