1N4007-B
  • Share:

Diodes Incorporated 1N4007-B

Manufacturer No:
1N4007-B
Manufacturer:
Diodes Incorporated
Package:
Bulk
Description:
DIODE GEN PURP 1KV 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007-B is a general-purpose rectifier diode produced by Diodes Incorporated. It is part of the 1N4001-1N4007 series, known for its high current capability and low-forward voltage drop. This diode is widely used in various electronic applications due to its robust specifications and reliability. The 1N4007-B is packaged in a DO-41 (plastic) case and is RoHS compliant, making it suitable for a broad range of industrial and consumer electronics.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Working Peak Reverse Voltage VRWM 1000 V
Average Rectified Output Current IO 1.0 A
Non-Repetitive Peak Forward Surge Current IFSM 30 A
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @ TA = +25°C at Rated DC Blocking Voltage IRM 5.0 μA
Typical Junction Capacitance Cj 15 pF
Maximum DC Blocking Voltage Temperature TA +150 °C
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Package DO-41 (Plastic)
Termination Type Axial Leaded
Junction Temperature Tj Max Tj 175 °C

Key Features

  • Diffused Junction: Ensures high current capability and low-forward voltage drop.
  • High Current Capability: Supports up to 1.0 A of average rectified output current.
  • Surge Overload Rating: Can handle up to 30 A peak forward surge current.
  • Low Reverse Leakage Current: Minimizes current loss during reverse bias conditions.
  • Lead-Free Finish; RoHS Compliant: Environmentally friendly and compliant with RoHS standards.
  • Axial Leaded Package: DO-41 plastic package with bright tin plated leads.
  • Wide Operating Temperature Range: Operates from -65°C to +150°C.

Applications

  • Power Supplies: Used in rectifier circuits for converting AC to DC.
  • Polarity Protection: Protects against reverse polarity in power supply circuits.
  • General Rectification: Suitable for various rectification needs in electronic circuits.
  • Automotive Applications: Can be used in automotive systems requiring specific change control and compliance with AEC-Q100 standards.
  • Consumer Electronics: Used in a wide range of consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the peak repetitive reverse voltage of the 1N4007-B diode?

    The peak repetitive reverse voltage (VRRM) of the 1N4007-B diode is 1000 V.

  2. What is the maximum average rectified output current of the 1N4007-B diode?

    The maximum average rectified output current (IO) is 1.0 A.

  3. What is the non-repetitive peak forward surge current rating of the 1N4007-B diode?

    The non-repetitive peak forward surge current (IFSM) is 30 A.

  4. What is the forward voltage drop at 1.0 A for the 1N4007-B diode?

    The forward voltage drop (VFM) at 1.0 A is approximately 1.0 V.

  5. Is the 1N4007-B diode RoHS compliant?

    Yes, the 1N4007-B diode is RoHS compliant.

  6. What is the operating temperature range of the 1N4007-B diode?

    The operating temperature range is from -65°C to +150°C.

  7. What type of package does the 1N4007-B diode come in?

    The 1N4007-B diode comes in a DO-41 (plastic) package with axial leads.

  8. Can the 1N4007-B diode be used in automotive applications?

    Yes, it can be used in automotive applications requiring specific change control and compliance with AEC-Q100 standards.

  9. What is the typical junction capacitance of the 1N4007-B diode?

    The typical junction capacitance (Cj) is 15 pF.

  10. What is the maximum junction temperature of the 1N4007-B diode?

    The maximum junction temperature (Tj) is 175°C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:5 µA @ 1000 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-41
Operating Temperature - Junction:- 
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
1N4004-T
1N4004-T
DIODE GEN PURP 400V 1A DO41
1N4001-T
1N4001-T
DIODE GEN PURP 50V 1A DO41
1N4006-T
1N4006-T
DIODE GEN PURP 800V 1A DO41
1N4002-T
1N4002-T
DIODE GEN PURP 100V 1A DO41
1N4001L-T
1N4001L-T
DIODE GEN PURP 50V 1A DO41
1N4003L-T
1N4003L-T
DIODE GEN PURP 200V 1A DO41
1N4004L-T
1N4004L-T
DIODE GEN PURP 400V 1A DO41
1N4006L-T
1N4006L-T
DIODE GEN PURP 800V 1A DO41
1N4007L-T
1N4007L-T
DIODE GEN PURP 1KV 1A DO41
1N4001-B
1N4001-B
DIODE GEN PURP 50V 1A DO41
1N4005-B
1N4005-B
DIODE GEN PURP 600V 1A DO41
1N4007-B
1N4007-B
DIODE GEN PURP 1KV 1A DO41

Similar Products

Part Number 1N4007-B 1N4007-G 1N4007-T 1N4007-F
Manufacturer Diodes Incorporated Comchip Technology Diodes Incorporated Rectron USA
Product Status Obsolete Active Not For New Designs Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V -
Current - Average Rectified (Io) 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A 1.1 V @ 1 A 1 V @ 1 A 1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - -
Current - Reverse Leakage @ Vr 5 µA @ 1000 V 5 µA @ 1000 V 5 µA @ 1000 V 200 nA @ 1000 V
Capacitance @ Vr, F 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz 8pF @ 4V, 1MHz 15pF @ 4V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial DO-204AL, DO-41, Axial
Supplier Device Package DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction - -55°C ~ 150°C -65°C ~ 150°C -55°C ~ 150°C

Related Product By Categories

BAT46WH,115
BAT46WH,115
Nexperia USA Inc.
DIODE SCHOT 100V 250MA SOD123F
PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAS40WS_R1_00001
BAS40WS_R1_00001
Panjit International Inc.
SOD-323, SKY
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
NSVBAS21AHT1G
NSVBAS21AHT1G
onsemi
DIODE GEN PURP 250V 200MA SOD323
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
NSR0340P2T5G
NSR0340P2T5G
onsemi
DIODE SCHOTTKY 40V 200MA SOD923
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BAV99BRVA-7
BAV99BRVA-7
Diodes Incorporated
DIODE ARRAY GP 75V 215MA SOT563
BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C15W-7-F
BZX84C15W-7-F
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BZT52HC20WF-7
BZT52HC20WF-7
Diodes Incorporated
DIODE ZENER 20V SOD123F T&R 3K
BZT52HC18WFQ-7
BZT52HC18WFQ-7
Diodes Incorporated
DIODE ZENER 18V 375MW SOD123F
BZX84C11W-7
BZX84C11W-7
Diodes Incorporated
DIODE ZENER 11V 200MW SOT323
BFS17HTA
BFS17HTA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ SOT23-3
MMBT3904FZ-7B
MMBT3904FZ-7B
Diodes Incorporated
TRANS NPN 40V 0.2A 3DFN
BCV46TC
BCV46TC
Diodes Incorporated
TRANS PNP DARL 60V 0.5A SOT23-3