NSVBAS21AHT1G
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onsemi NSVBAS21AHT1G

Manufacturer No:
NSVBAS21AHT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBAS21AHT1G is a low leakage switching diode produced by onsemi, designed for various applications including automotive and other sectors requiring unique site and control change requirements. This diode is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. It is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and suitable for a wide range of applications.

Key Specifications

Characteristic Symbol Rating Unit
Continuous Reverse Voltage VR 250 Vdc
Repetitive Peak Reverse Voltage VRRM 250 Vdc
Peak Forward Current IF 200 mAdc
Peak Forward Surge Current IFM(surge) 625 mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C) PD 200 mW
Thermal Resistance, Junction-to-Ambient RJA 635 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Reverse Voltage Leakage Current (VR = 200 Vdc, TJ = 150°C) IR 100 nAdc
Forward Voltage (IF = 100 mAdc) VF 1000 mV
Diode Capacitance (VR = 0, f = 1.0 MHz) CD 5.0 pF
Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) trr 50 ns

Key Features

  • NSV Prefix for automotive and other applications requiring unique site and control change requirements.
  • AEC-Q101 qualified and PPAP capable, ensuring high reliability in automotive applications.
  • Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
  • Low leakage current, suitable for applications requiring minimal reverse current.
  • High reverse voltage rating of 250 Vdc.
  • High peak forward surge current of 625 mAdc.
  • Compact SOD-323 package, ideal for space-constrained designs.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power supplies: Used in power supply circuits where low leakage and high reverse voltage ratings are essential.
  • Switching circuits: Ideal for switching applications requiring fast recovery times and low forward voltage drop.
  • General electronics: Can be used in a wide range of electronic devices requiring reliable and efficient diode performance.

Q & A

  1. What is the continuous reverse voltage rating of the NSVBAS21AHT1G diode?

    The continuous reverse voltage rating is 250 Vdc.

  2. Is the NSVBAS21AHT1G diode RoHS compliant?

    Yes, the diode is Pb-free, halogen-free, and RoHS compliant.

  3. What is the peak forward surge current of the NSVBAS21AHT1G diode?

    The peak forward surge current is 625 mAdc.

  4. What is the thermal resistance, junction-to-ambient of the NSVBAS21AHT1G diode?

    The thermal resistance, junction-to-ambient is 635 °C/W.

  5. What is the junction and storage temperature range of the NSVBAS21AHT1G diode?

    The junction and storage temperature range is −55 to +150 °C.

  6. What is the reverse recovery time of the NSVBAS21AHT1G diode?

    The reverse recovery time is typically 50 ns.

  7. Is the NSVBAS21AHT1G diode suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  8. What package type is the NSVBAS21AHT1G diode available in?

    The diode is available in the SOD-323 package.

  9. What is the forward voltage drop of the NSVBAS21AHT1G diode at 100 mAdc?

    The forward voltage drop at 100 mAdc is typically 1000 mV.

  10. Is the NSVBAS21AHT1G diode designed for use in life support systems or medical devices?

    No, the diode is not designed or intended for use in life support systems or medical devices.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:40 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
NSVBAS21AHT1G
NSVBAS21AHT1G
DIODE GEN PURP 250V 200MA SOD323

Similar Products

Part Number NSVBAS21AHT1G NSVBAS21HT1G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 40 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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