MBR2H100SFT3G
  • Share:

onsemi MBR2H100SFT3G

Manufacturer No:
MBR2H100SFT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 2A SOD123FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR2H100SFT3G is a surface mount Schottky power rectifier produced by onsemi. This device utilizes the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideally suited for low voltage, high current applications. The MBR2H100SFT3G is packaged in the SOD-123 format, which is compact and suitable for a variety of modern electronic designs.

Key Specifications

Parameter Value
Voltage Rating (V) 100 V
Forward Current (If) 2 A
Forward Voltage Drop (Vf) 840 mV @ 2 A
Reverse Current (Ir) 500 uA
Forward Surge Current (Ifsm) 50 A
Minimum Operating Temperature -65°C
Maximum Operating Temperature +175°C
Package Type SOD-123

Key Features

  • High current capability with a forward current rating of 2 A.
  • Low forward voltage drop of 840 mV at 2 A, reducing power losses.
  • High surge current capability of 50 A.
  • Wide operating temperature range from -65°C to +175°C.
  • Compact SOD-123 package suitable for space-saving designs.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The MBR2H100SFT3G is suitable for a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Switch-mode power supplies.
  • High-frequency rectification.
  • Automotive and industrial power systems.
  • General-purpose rectification in low voltage, high current circuits.

Q & A

  1. What is the voltage rating of the MBR2H100SFT3G?

    The voltage rating of the MBR2H100SFT3G is 100 V.

  2. What is the forward current rating of the MBR2H100SFT3G?

    The forward current rating of the MBR2H100SFT3G is 2 A.

  3. What is the forward voltage drop of the MBR2H100SFT3G at 2 A?

    The forward voltage drop of the MBR2H100SFT3G at 2 A is 840 mV.

  4. What is the maximum operating temperature of the MBR2H100SFT3G?

    The maximum operating temperature of the MBR2H100SFT3G is +175°C.

  5. What is the package type of the MBR2H100SFT3G?

    The package type of the MBR2H100SFT3G is SOD-123.

  6. Is the MBR2H100SFT3G ROHS compliant?

    Yes, the MBR2H100SFT3G is ROHS compliant.

  7. What is the forward surge current rating of the MBR2H100SFT3G?

    The forward surge current rating of the MBR2H100SFT3G is 50 A.

  8. What are some common applications of the MBR2H100SFT3G?

    The MBR2H100SFT3G is commonly used in power supplies, DC-DC converters, switch-mode power supplies, high-frequency rectification, and automotive and industrial power systems.

  9. What is the minimum operating temperature of the MBR2H100SFT3G?

    The minimum operating temperature of the MBR2H100SFT3G is -65°C.

  10. What principle does the MBR2H100SFT3G use?

    The MBR2H100SFT3G uses the Schottky Barrier principle with a large area metal-to-silicon power diode.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,024

Please send RFQ , we will respond immediately.

Same Series
NRVB2H100SFT3G
NRVB2H100SFT3G
DIODE SCHOTTKY 100V 2A SOD123FL

Similar Products

Part Number MBR2H100SFT3G MBR2H200SFT3G MBR1H100SFT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 1A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 2 A 940 mV @ 2 A 760 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 40 µA @ 100 V 200 µA @ 200 V 40 µA @ 100 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

BAS286-GS08
BAS286-GS08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 200MA SOD80
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
RB521S30T5G
RB521S30T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STPS3L60UF
STPS3L60UF
STMicroelectronics
DIODE SCHOTTKY 60V 3A SMBFLAT
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4