MBR2H100SFT3G
  • Share:

onsemi MBR2H100SFT3G

Manufacturer No:
MBR2H100SFT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 100V 2A SOD123FL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR2H100SFT3G is a surface mount Schottky power rectifier produced by onsemi. This device utilizes the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideally suited for low voltage, high current applications. The MBR2H100SFT3G is packaged in the SOD-123 format, which is compact and suitable for a variety of modern electronic designs.

Key Specifications

Parameter Value
Voltage Rating (V) 100 V
Forward Current (If) 2 A
Forward Voltage Drop (Vf) 840 mV @ 2 A
Reverse Current (Ir) 500 uA
Forward Surge Current (Ifsm) 50 A
Minimum Operating Temperature -65°C
Maximum Operating Temperature +175°C
Package Type SOD-123

Key Features

  • High current capability with a forward current rating of 2 A.
  • Low forward voltage drop of 840 mV at 2 A, reducing power losses.
  • High surge current capability of 50 A.
  • Wide operating temperature range from -65°C to +175°C.
  • Compact SOD-123 package suitable for space-saving designs.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The MBR2H100SFT3G is suitable for a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Switch-mode power supplies.
  • High-frequency rectification.
  • Automotive and industrial power systems.
  • General-purpose rectification in low voltage, high current circuits.

Q & A

  1. What is the voltage rating of the MBR2H100SFT3G?

    The voltage rating of the MBR2H100SFT3G is 100 V.

  2. What is the forward current rating of the MBR2H100SFT3G?

    The forward current rating of the MBR2H100SFT3G is 2 A.

  3. What is the forward voltage drop of the MBR2H100SFT3G at 2 A?

    The forward voltage drop of the MBR2H100SFT3G at 2 A is 840 mV.

  4. What is the maximum operating temperature of the MBR2H100SFT3G?

    The maximum operating temperature of the MBR2H100SFT3G is +175°C.

  5. What is the package type of the MBR2H100SFT3G?

    The package type of the MBR2H100SFT3G is SOD-123.

  6. Is the MBR2H100SFT3G ROHS compliant?

    Yes, the MBR2H100SFT3G is ROHS compliant.

  7. What is the forward surge current rating of the MBR2H100SFT3G?

    The forward surge current rating of the MBR2H100SFT3G is 50 A.

  8. What are some common applications of the MBR2H100SFT3G?

    The MBR2H100SFT3G is commonly used in power supplies, DC-DC converters, switch-mode power supplies, high-frequency rectification, and automotive and industrial power systems.

  9. What is the minimum operating temperature of the MBR2H100SFT3G?

    The minimum operating temperature of the MBR2H100SFT3G is -65°C.

  10. What principle does the MBR2H100SFT3G use?

    The MBR2H100SFT3G uses the Schottky Barrier principle with a large area metal-to-silicon power diode.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SOD-123F
Supplier Device Package:SOD-123FL
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.52
1,024

Please send RFQ , we will respond immediately.

Same Series
NRVB2H100SFT3G
NRVB2H100SFT3G
DIODE SCHOTTKY 100V 2A SOD123FL

Similar Products

Part Number MBR2H100SFT3G MBR2H200SFT3G MBR1H100SFT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 1A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 2 A 940 mV @ 2 A 760 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 40 µA @ 100 V 200 µA @ 200 V 40 µA @ 100 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOD-123F SOD-123F SOD-123F
Supplier Device Package SOD-123FL SOD-123FL SOD-123FL
Operating Temperature - Junction -65°C ~ 175°C -55°C ~ 150°C -65°C ~ 175°C

Related Product By Categories

MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS5L60SFY
STPS5L60SFY
STMicroelectronics
AUTOMOTIVE GRADE 60V LOWVF POWER
STPS20L15D
STPS20L15D
STMicroelectronics
DIODE SCHOTTKY 15V 20A TO220AC
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAV21W-7
BAV21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOD123
STTH8R06G
STTH8R06G
STMicroelectronics
DIODE GEN PURP 600V 8A D2PAK
NRVBA140T3G
NRVBA140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMA
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI