Overview
The MMBT4401LT1G is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for switching applications and is known for its reliability and compliance with various industry standards. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector Current - Peak | ICM | 900 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Maximum Collector Power Dissipation | Pc | 0.225 | W |
| Small-Signal Current Gain | hfe | 40 to 500 | - |
| Delay Time | td | 15 | ns |
| Rise Time | tr | 20 | ns |
| Storage Time | ts | 225 | ns |
| Fall Time | tf | 30 | ns |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High collector-emitter voltage (VCEO) of 40 Vdc and collector-base voltage (VCBO) of 60 Vdc.
- Continuous collector current (IC) of 600 mAdc and peak collector current (ICM) of 900 mAdc.
- Low thermal resistance, junction-to-ambient (RθJA) of 417 °C/W.
- Wide junction and storage temperature range of -55 to +150 °C.
- High small-signal current gain (hfe) ranging from 40 to 500.
- Fast switching times with delay time (td) of 15 ns, rise time (tr) of 20 ns, storage time (ts) of 225 ns, and fall time (tf) of 30 ns.
Applications
The MMBT4401LT1G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems due to its AEC-Q101 qualification.
- General-purpose switching and amplification.
- Consumer electronics requiring high reliability and environmental compliance.
- Industrial control systems where fast switching times are critical.
Q & A
- What is the collector-emitter voltage (VCEO) of the MMBT4401LT1G transistor?
The collector-emitter voltage (VCEO) is 40 Vdc. - Is the MMBT4401LT1G transistor RoHS compliant?
Yes, the MMBT4401LT1G is RoHS compliant. - What is the maximum continuous collector current (IC) of the MMBT4401LT1G?
The maximum continuous collector current (IC) is 600 mAdc. - What is the thermal resistance, junction-to-ambient (RθJA), of the MMBT4401LT1G?
The thermal resistance, junction-to-ambient (RθJA), is 417 °C/W. - What are the typical applications of the MMBT4401LT1G transistor?
The MMBT4401LT1G is used in automotive systems, general-purpose switching, consumer electronics, and industrial control systems. - Is the MMBT4401LT1G transistor Pb-free and halogen-free?
Yes, the MMBT4401LT1G is Pb-free and halogen-free. - What is the small-signal current gain (hfe) range of the MMBT4401LT1G?
The small-signal current gain (hfe) ranges from 40 to 500. - What are the delay, rise, storage, and fall times of the MMBT4401LT1G transistor?
The delay time (td) is 15 ns, the rise time (tr) is 20 ns, the storage time (ts) is 225 ns, and the fall time (tf) is 30 ns. - What is the maximum collector power dissipation (Pc) of the MMBT4401LT1G?
The maximum collector power dissipation (Pc) is 0.225 W. - Is the MMBT4401LT1G transistor AEC-Q101 qualified?
Yes, the MMBT4401LT1G is AEC-Q101 qualified and PPAP capable.
