MPSA29-D26Z
  • Share:

onsemi MPSA29-D26Z

Manufacturer No:
MPSA29-D26Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 100V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29-D26Z is an NPN Darlington transistor produced by onsemi. This device is specifically designed for applications that require extremely high current gain, particularly at collector currents up to 500 mA. It is sourced from process 03 and is known for its high performance and reliability. The MPSA29 is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 12 V
Collector Current - Continuous IC 800 mA
Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 °C
Total Device Dissipation PD 625 mW
Dissipation Derate Above 25°C PD 5.0 mW/°C
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
DC Current Gain hFE 10,000 -
Collector-Emitter Saturation Voltage VCE(sat) 1.2 - 1.5 V
Base-Emitter On Voltage VBE(on) 2.0 V
Current Gain - Bandwidth Product fT 125 MHz
Output Capacitance Cobo 8.0 pF

Key Features

  • High current gain: The MPSA29 offers a DC current gain (hFE) of up to 10,000, making it suitable for applications requiring high amplification.
  • High collector current: It can handle collector currents up to 500 mA.
  • Low saturation voltage: The collector-emitter saturation voltage (VCE(sat)) is as low as 1.2 V, which is beneficial for reducing power consumption.
  • Wide operating temperature range: The device operates over a junction temperature range of -55°C to 150°C.
  • Pb-free, halogen-free, and RoHS compliant: Ensures environmental compliance and safety.
  • High thermal stability: With thermal resistance values of RθJC = 83.3 °C/W and RθJA = 200 °C/W, the device can handle various thermal conditions.

Applications

  • Power amplifiers: Due to its high current gain and ability to handle high collector currents, it is suitable for power amplifier applications.
  • Motor control: The MPSA29 can be used in motor control circuits where high current and high gain are required.
  • Relay drivers: It is often used to drive relays in various industrial and automotive applications.
  • Audio amplifiers: Its high gain and low saturation voltage make it a good choice for audio amplifier circuits.
  • General-purpose switching: The device can be used in general-purpose switching applications where high current and reliability are necessary.

Q & A

  1. What is the maximum collector-emitter voltage of the MPSA29?

    The maximum collector-emitter voltage (VCEO) is 100 V.

  2. What is the maximum collector current of the MPSA29?

    The maximum continuous collector current (IC) is 800 mA.

  3. What is the operating temperature range of the MPSA29?

    The operating and storage junction temperature range is -55°C to 150°C.

  4. Is the MPSA29 RoHS compliant?

    Yes, the MPSA29 is Pb-free, halogen-free, and RoHS compliant.

  5. What is the typical DC current gain of the MPSA29?

    The typical DC current gain (hFE) is 10,000.

  6. What is the collector-emitter saturation voltage of the MPSA29?

    The collector-emitter saturation voltage (VCE(sat)) is between 1.2 V and 1.5 V.

  7. What is the thermal resistance from junction to case for the MPSA29?

    The thermal resistance from junction to case (RθJC) is 83.3 °C/W.

  8. What is the current gain-bandwidth product of the MPSA29?

    The current gain-bandwidth product (fT) is 125 MHz.

  9. What is the output capacitance of the MPSA29?

    The output capacitance (Cobo) is 8.0 pF.

  10. What package types are available for the MPSA29?

    The MPSA29 is available in TO-92-3 packages, including straight lead bulk packing and tape & reel options.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
0 Remaining View Similar

In Stock

$0.50
1,994

Please send RFQ , we will respond immediately.

Same Series
MPSA29_D27Z
MPSA29_D27Z
TRANS NPN DARL 100V 0.8A TO92-3
MPSA29_D75Z
MPSA29_D75Z
TRANS NPN DARL 100V 0.8A TO92-3

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC847BW
BC847BW
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC856BW_R1_00001
BC856BW_R1_00001
Panjit International Inc.
TRANS PNP 65V 0.1A SOT323
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN