MPSA29-D26Z
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onsemi MPSA29-D26Z

Manufacturer No:
MPSA29-D26Z
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 100V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MPSA29-D26Z is an NPN Darlington transistor produced by onsemi. This device is specifically designed for applications that require extremely high current gain, particularly at collector currents up to 500 mA. It is sourced from process 03 and is known for its high performance and reliability. The MPSA29 is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 100 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 12 V
Collector Current - Continuous IC 800 mA
Operating and Storage Junction Temperature Range TJ, TSTG -55 to 150 °C
Total Device Dissipation PD 625 mW
Dissipation Derate Above 25°C PD 5.0 mW/°C
Thermal Resistance, Junction-to-Case RθJC 83.3 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 200 °C/W
DC Current Gain hFE 10,000 -
Collector-Emitter Saturation Voltage VCE(sat) 1.2 - 1.5 V
Base-Emitter On Voltage VBE(on) 2.0 V
Current Gain - Bandwidth Product fT 125 MHz
Output Capacitance Cobo 8.0 pF

Key Features

  • High current gain: The MPSA29 offers a DC current gain (hFE) of up to 10,000, making it suitable for applications requiring high amplification.
  • High collector current: It can handle collector currents up to 500 mA.
  • Low saturation voltage: The collector-emitter saturation voltage (VCE(sat)) is as low as 1.2 V, which is beneficial for reducing power consumption.
  • Wide operating temperature range: The device operates over a junction temperature range of -55°C to 150°C.
  • Pb-free, halogen-free, and RoHS compliant: Ensures environmental compliance and safety.
  • High thermal stability: With thermal resistance values of RθJC = 83.3 °C/W and RθJA = 200 °C/W, the device can handle various thermal conditions.

Applications

  • Power amplifiers: Due to its high current gain and ability to handle high collector currents, it is suitable for power amplifier applications.
  • Motor control: The MPSA29 can be used in motor control circuits where high current and high gain are required.
  • Relay drivers: It is often used to drive relays in various industrial and automotive applications.
  • Audio amplifiers: Its high gain and low saturation voltage make it a good choice for audio amplifier circuits.
  • General-purpose switching: The device can be used in general-purpose switching applications where high current and reliability are necessary.

Q & A

  1. What is the maximum collector-emitter voltage of the MPSA29?

    The maximum collector-emitter voltage (VCEO) is 100 V.

  2. What is the maximum collector current of the MPSA29?

    The maximum continuous collector current (IC) is 800 mA.

  3. What is the operating temperature range of the MPSA29?

    The operating and storage junction temperature range is -55°C to 150°C.

  4. Is the MPSA29 RoHS compliant?

    Yes, the MPSA29 is Pb-free, halogen-free, and RoHS compliant.

  5. What is the typical DC current gain of the MPSA29?

    The typical DC current gain (hFE) is 10,000.

  6. What is the collector-emitter saturation voltage of the MPSA29?

    The collector-emitter saturation voltage (VCE(sat)) is between 1.2 V and 1.5 V.

  7. What is the thermal resistance from junction to case for the MPSA29?

    The thermal resistance from junction to case (RθJC) is 83.3 °C/W.

  8. What is the current gain-bandwidth product of the MPSA29?

    The current gain-bandwidth product (fT) is 125 MHz.

  9. What is the output capacitance of the MPSA29?

    The output capacitance (Cobo) is 8.0 pF.

  10. What package types are available for the MPSA29?

    The MPSA29 is available in TO-92-3 packages, including straight lead bulk packing and tape & reel options.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:10000 @ 100mA, 5V
Power - Max:625 mW
Frequency - Transition:125MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

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