FDG6332C
  • Share:

onsemi FDG6332C

Manufacturer No:
FDG6332C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6332C is a dual N & P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is particularly suited for applications requiring high power dissipation in a compact footprint, making it an ideal choice for scenarios where larger packages like TSSOP-8 and SSOP-6 are impractical.

Key Specifications

ParameterQ1 (N-Channel)Q2 (P-Channel)Unit
Drain-Source Voltage (VDSS)20-20V
Gate-Source Voltage (VGSS)±12±12V
Continuous Drain Current (ID)0.7-0.6A
Pulsed Drain Current (ID)2.1-2A
Power Dissipation (PD)0.30.3W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to 150-55 to 150°C
On-State Resistance (RDS(ON)) at VGS = 4.5 V / -4.5 V300 mΩ / 420 mΩ400 mΩ / 630 mΩ
Thermal Resistance, Junction-to-Ambient (RθJA)415415°C/W

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge
  • SC70-6 package: small footprint (51% smaller than SSOT-6), low profile (1 mm thick)
  • ESD protection level: HBM > 75 V, MM > 25 V, CDM > 1.5 kV
  • Pb-free and RoHS compliant

Applications

  • DC-DC converters
  • Load switches
  • LCD display inverters

Q & A

  1. What is the FDG6332C MOSFET used for? The FDG6332C is used in applications such as DC-DC converters, load switches, and LCD display inverters.
  2. What is the maximum drain-source voltage for Q1 and Q2? The maximum drain-source voltage for Q1 is 20 V and for Q2 is -20 V.
  3. What is the continuous drain current rating for Q1 and Q2? The continuous drain current rating for Q1 is 0.7 A and for Q2 is -0.6 A.
  4. What is the thermal resistance, junction-to-ambient (RθJA) for the FDG6332C? The thermal resistance, junction-to-ambient (RθJA) is 415 °C/W.
  5. Is the FDG6332C Pb-free and RoHS compliant? Yes, the FDG6332C is Pb-free and RoHS compliant.
  6. What is the package type of the FDG6332C? The FDG6332C comes in an SC70-6 package.
  7. What are the ESD protection levels for the FDG6332C? The ESD protection levels are HBM > 75 V, MM > 25 V, and CDM > 1.5 kV.
  8. What is the operating and storage junction temperature range for the FDG6332C? The operating and storage junction temperature range is -55 to 150 °C.
  9. How does the PowerTrench technology benefit the FDG6332C? The PowerTrench technology minimizes on-state resistance while maintaining superior switching performance.
  10. What is the maximum power dissipation for single operation of the FDG6332C? The maximum power dissipation for single operation is 0.3 W.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA, 600mA
Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
0 Remaining View Similar

In Stock

$0.56
876

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDG6332C FDG6322C
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 25V
Current - Continuous Drain (Id) @ 25°C 700mA, 600mA 220mA, 410mA
Rds On (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V 9.5pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-88 (SC-70-6)

Related Product By Categories

NTHD4508NT1G
NTHD4508NT1G
onsemi
MOSFET 2N-CH 20V 3A CHIPFET
2N7002DW-TP
2N7002DW-TP
Micro Commercial Co
MOSFET 2N-CH 60V 0.115A SOT-363
FDMA3023PZ
FDMA3023PZ
onsemi
MOSFET 2P-CH 30V 2.9A 6MICROFET
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
NTZD3155CT1G
NTZD3155CT1G
onsemi
MOSFET N/P-CH 20V SOT-563
FDY3000NZ
FDY3000NZ
onsemi
MOSFET 2N-CH 20V 600MA SOT563F
BUK9K17-60EX
BUK9K17-60EX
Nexperia USA Inc.
MOSFET 2N-CH 60V 26A 56LFPAK
BSS84DWQ-13
BSS84DWQ-13
Diodes Incorporated
BSS FAMILY SOT363 T&R 10K
BSS84DWQ-7
BSS84DWQ-7
Diodes Incorporated
BSS FAMILY SOT363 T&R 3K
FDG6301N-F085
FDG6301N-F085
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
STL13DP10F6
STL13DP10F6
STMicroelectronics
MOSFET 2P-CH 100V 13A PWRFLAT56

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NSV45035JZT1G
NSV45035JZT1G
onsemi
IC REG CCR 45V 35MA SOT223
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB