FDG6332C
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onsemi FDG6332C

Manufacturer No:
FDG6332C
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDG6332C is a dual N & P-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is designed to minimize on-state resistance while maintaining superior switching performance. The device is particularly suited for applications requiring high power dissipation in a compact footprint, making it an ideal choice for scenarios where larger packages like TSSOP-8 and SSOP-6 are impractical.

Key Specifications

ParameterQ1 (N-Channel)Q2 (P-Channel)Unit
Drain-Source Voltage (VDSS)20-20V
Gate-Source Voltage (VGSS)±12±12V
Continuous Drain Current (ID)0.7-0.6A
Pulsed Drain Current (ID)2.1-2A
Power Dissipation (PD)0.30.3W
Operating and Storage Junction Temperature Range (TJ, TSTG)-55 to 150-55 to 150°C
On-State Resistance (RDS(ON)) at VGS = 4.5 V / -4.5 V300 mΩ / 420 mΩ400 mΩ / 630 mΩ
Thermal Resistance, Junction-to-Ambient (RθJA)415415°C/W

Key Features

  • High performance trench technology for extremely low RDS(ON)
  • Low gate charge
  • SC70-6 package: small footprint (51% smaller than SSOT-6), low profile (1 mm thick)
  • ESD protection level: HBM > 75 V, MM > 25 V, CDM > 1.5 kV
  • Pb-free and RoHS compliant

Applications

  • DC-DC converters
  • Load switches
  • LCD display inverters

Q & A

  1. What is the FDG6332C MOSFET used for? The FDG6332C is used in applications such as DC-DC converters, load switches, and LCD display inverters.
  2. What is the maximum drain-source voltage for Q1 and Q2? The maximum drain-source voltage for Q1 is 20 V and for Q2 is -20 V.
  3. What is the continuous drain current rating for Q1 and Q2? The continuous drain current rating for Q1 is 0.7 A and for Q2 is -0.6 A.
  4. What is the thermal resistance, junction-to-ambient (RθJA) for the FDG6332C? The thermal resistance, junction-to-ambient (RθJA) is 415 °C/W.
  5. Is the FDG6332C Pb-free and RoHS compliant? Yes, the FDG6332C is Pb-free and RoHS compliant.
  6. What is the package type of the FDG6332C? The FDG6332C comes in an SC70-6 package.
  7. What are the ESD protection levels for the FDG6332C? The ESD protection levels are HBM > 75 V, MM > 25 V, and CDM > 1.5 kV.
  8. What is the operating and storage junction temperature range for the FDG6332C? The operating and storage junction temperature range is -55 to 150 °C.
  9. How does the PowerTrench technology benefit the FDG6332C? The PowerTrench technology minimizes on-state resistance while maintaining superior switching performance.
  10. What is the maximum power dissipation for single operation of the FDG6332C? The maximum power dissipation for single operation is 0.3 W.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA, 600mA
Rds On (Max) @ Id, Vgs:300mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:113pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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Similar Products

Part Number FDG6332C FDG6322C
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 25V
Current - Continuous Drain (Id) @ 25°C 700mA, 600mA 220mA, 410mA
Rds On (Max) @ Id, Vgs 300mOhm @ 700mA, 4.5V 4Ohm @ 220mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V 9.5pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6) SC-88 (SC-70-6)

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