STL8DN6LF3
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STMicroelectronics STL8DN6LF3

Manufacturer No:
STL8DN6LF3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 20A 5X6
Delivery:
Payment:
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Product Introduction

Overview

The STL8DN6LF3 is an N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET F3 technology. This device is designed to minimize on-resistance and gate charge, thereby providing superior switching performance. It operates in enhancement mode, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
VGS (Gate-Source Voltage)±20 V
ID (Continuous Drain Current)100 A
RDS(on) (On-Resistance)2.5 mΩ (typical at VGS = 10 V)
QG (Total Gate Charge)120 nC (typical at VGS = 10 V)
TJ (Junction Temperature)-55 to 150°C

Key Features

  • Low on-resistance (RDS(on)) of 2.5 mΩ (typical at VGS = 10 V)
  • Low total gate charge (QG) of 120 nC (typical at VGS = 10 V)
  • High continuous drain current (ID) of 100 A
  • Enhancement mode operation
  • Wide junction temperature range (-55 to 150°C)

Applications

The STL8DN6LF3 is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Automotive systems
  • Industrial control and automation
  • Renewable energy systems

Q & A

  1. What is the maximum drain-source voltage of the STL8DN6LF3?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the typical on-resistance of the STL8DN6LF3?
    The typical on-resistance (RDS(on)) is 2.5 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the STL8DN6LF3?
    The continuous drain current (ID) is 100 A.
  4. What technology is used in the STL8DN6LF3?
    The STL8DN6LF3 is produced using STMicroelectronics' STripFET F3 technology.
  5. What is the junction temperature range of the STL8DN6LF3?
    The junction temperature range is -55 to 150°C.
  6. What are some typical applications of the STL8DN6LF3?
    Typical applications include power supplies, motor control, automotive systems, industrial control, and renewable energy systems.
  7. What is the gate-source voltage range for the STL8DN6LF3?
    The gate-source voltage (VGS) range is ±20 V.
  8. How much total gate charge does the STL8DN6LF3 have?
    The total gate charge (QG) is 120 nC (typical at VGS = 10 V).
  9. Is the STL8DN6LF3 an enhancement mode or depletion mode MOSFET?
    The STL8DN6LF3 is an enhancement mode MOSFET.
  10. Where can I find detailed specifications for the STL8DN6LF3?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Digi-Key and TME.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:668pF @ 25V
Power - Max:65W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (5x6)
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Similar Products

Part Number STL8DN6LF3 STL7DN6LF3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 20A 20A
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 10V 43mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 668pF @ 25V 432pF @ 25V
Power - Max 65W 52W
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)

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